2008
DOI: 10.1109/led.2008.2000949
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AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

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Cited by 132 publications
(73 citation statements)
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“…The nucleation layer is used to increase crystalline quality, surface morphology and electrical properties of the GaN layer. 19 In Fig. 2, the graph 1 (black) and graph 2 (red) indicates the heterostructure without and with SiN passivation.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The nucleation layer is used to increase crystalline quality, surface morphology and electrical properties of the GaN layer. 19 In Fig. 2, the graph 1 (black) and graph 2 (red) indicates the heterostructure without and with SiN passivation.…”
Section: Methodsmentioning
confidence: 99%
“…17,18 The influence on carrier concentration of AlGaN/GaN heterostructures by various passivation layers have been investigated in past by different groups as reported in literature. 18,19 However, further comparative in-depth analysis of strain induced carrier confinement at the AlGaN/GaN interface before and after passivation is needed to thoroughly elucidate the passivation phenomenon.…”
Section: Introductionmentioning
confidence: 99%
“…6 In the last years, several high permittivity oxides (Al 2 O 3 , HfO 2 , Gd 2 O 3 , MgO, Sc 2 O 3 , NiO) have been considered as gate insulators in AlGaN/GaN technology, [7][8][9][10][11] with HfO 2 showing remarkably high permittivity values (k > 20). 12,13 Cerium oxide (CeO 2 ) has excellent electrical properties, like a band gap of $6 eV, a high permittivity (k ¼ 15-26), and a critical electric field of 4.9 MV/cm. 14 Although preliminary measurements on metal/CeO 2 /GaN capacitors have been already reported, 15 the implementation of CeO 2 on AlGaN/GaN heterostructures was not demonstrated yet.…”
mentioning
confidence: 99%
“…Among various device structures, AlGaN/GaN MOSHFETs [1][2][3] are attractive because of the high electron mobility in the AlGaN/GaN heterointerface and small gate leakage current due to the gate oxide. Among various high-k materials such as HfO 2 [3,4], ZrO 2 [5] and Al 2 O 3 [6] as a gate insulator in the AlGaN/GaN MOSHFETs, Al 2 O 3 having a relatively high dielectric constant (ε r = 8-10) [6] is attractive because of a large conduction band offset against GaN (2.2 eV) [7], leading to a suppression of the gate leakage current.…”
mentioning
confidence: 99%