2001
DOI: 10.1049/el:20011007
|View full text |Cite
|
Sign up to set email alerts
|

AlGaN/GaN varactor diode for integration in HEMTcircuits

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
12
0

Year Published

2006
2006
2017
2017

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 30 publications
(12 citation statements)
references
References 5 publications
0
12
0
Order By: Relevance
“…T HE metal-semiconductor-metal diode above a twodimensional electron gas (MSM-2DEG) has shown its potential as a varactor that can be easily integrated with HFET devices [1]- [3]. This possibility of monolithic integration is especially important in the AlGaN/GaN material system where alternative integration methods, such as selective epitaxy, are not mature [4].…”
Section: Introductionmentioning
confidence: 99%
“…T HE metal-semiconductor-metal diode above a twodimensional electron gas (MSM-2DEG) has shown its potential as a varactor that can be easily integrated with HFET devices [1]- [3]. This possibility of monolithic integration is especially important in the AlGaN/GaN material system where alternative integration methods, such as selective epitaxy, are not mature [4].…”
Section: Introductionmentioning
confidence: 99%
“…Also, the C(V) measurement has the additional advantage of giving the amount of charge in the channel below the metal contact. C(V) measurements of MSHM structures have, earlier, been presented for InP-based and AlGaN/GaN heterostructure varactor diodes by Marso et al [5,6].…”
mentioning
confidence: 98%
“…In addition, its voltage-dependent capacitance ratio is much larger than that of conventional varactor diodes and can be tuned by electrode geometry in contrast to the conventional p-n, Schottky, or heterostructure diodes where the ratio is only defined by the layer structure. [1][2][3] After the development of SiO 2 /AlGaN/GaN-based double metal-oxide-semiconductor heterojunction capacitors with reduced leakage current, the MSM-2DEG based on this layer structure was proposed as a robust radio-frequency switch. 4 Most of these applications seek the large capacitance ratio.…”
mentioning
confidence: 99%