All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

Daskalakis, Konstantinos S.; Eldridge, P. S.; Christmann, Gabriel; Trichas, E.; Murray, R.; Iliopoulos, E.; Monroy, E.; Pelekanos, N. T.; Baumberg, Jeremy J.; Savvidis, P. G.

doi:10.1063/1.4795019

Cited by 59 publications

(45 citation statements)

References 18 publications

(22 reference statements)

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“…7,8,9,10,11 Unfortunately, inserting a high crystalline quality material in between two dielectric amorphous DBRs requires complex processing steps. 7,8,10,11 Instead, DBRs made of semiconductor materials epitaxially grown on a crystalline substrate should enable to maintain a high crystalline quality, but require in turn a much larger number of pairs to obtain Qs similar to those achievable with dielectric materials. 12 The nitrides family (AlInGaN) seems to be more promising for fabricating the DBR than the (ZnMgCdO) one, as it presents a larger refractive index contrast within the family while keeping the same crystalline phase (i.e.…”

Section: Lpn-cnrs Route De Nozay 91460 Marcoussis Francementioning

confidence: 99%

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Zúñiga‐Pérez

Mallet

Hahe

et al. 2014

Applied Physics Letters

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A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.

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Section: Lpn-cnrs Route De Nozay 91460 Marcoussis Francementioning

confidence: 99%

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Zúñiga‐Pérez

Mallet

Hahe

et al. 2014

Applied Physics Letters

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“…15,16 Although polariton lasing has been mainly observed at low temperature due to the small binding energy typical of Wannier-Mott excitons, 13 recent developments have led to room temperature demonstrations in III-nitrides and ZnO. 17,18,19,20 Frenkel excitons possess binding energies of ~ 1 eV and are thus highly stable at room temperature. 21 Organic polariton lasing was first demonstrated in microcavities containing anthracene single-crystals.…”

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confidence: 99%

Nonlinear interactions in an organic polariton condensate

et al. 2014

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Under the right conditions, cavity polaritons form a macroscopic condensate in the ground state. The fascinating nonlinear behaviour of this condensate is largely dictated by the strength of polariton-polariton interactions. In inorganic semiconductors, these result principally from the Coulomb interaction between Wannier-Mott excitons. Such interactions are considerably weaker for the tightly bound Frenkel excitons characteristic of organic semiconductors and were notably absent in the first reported demonstration of organic polariton lasing. In this work, we demonstrate the realization of an organic polariton condensate, at room temperature, in a microcavity containing a thin film of 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorene. Upon reaching threshold, we observe the spontaneous formation of a linearly polarized condensate, which exhibits a superlinear power dependence, long-range order and a power dependent blue shift: a clear signature of Frenkel polariton interactions. 2The last decade has seen the study of the quantum fluidic behaviour of light flourish. 1 One branch of this field has focused on exploiting the properties of cavity polaritons:hybrid light-matter quasiparticles formed in semiconductor microcavities. 2 The substantial interest in strongly coupled semiconductor microcavities stems principally from the possibility to impart weakly interacting cavity photons with a strongly interacting matter component inherited from the exciton. On one hand, this matter component enhances energetic relaxation towards the polariton ground state by allowing interactions with phonons and other polaritons. 3,4 On the other hand, the nonlinearity inherited from the exciton gives rise to the hydrodynamic behaviour of polaritons. 5,6, 7,8,9,10,11 Polaritons have a finite lifetime, determined principally by their photonic component, beyond which they decay through the cavity mirrors. If relaxation is efficient enough, however, a macroscopic population can be accumulated in a single state-often the ground state-via bosonic final state stimulation. 12, 13,14 The threshold corresponding to this process, termed polariton lasing, can be significantly below that required for conventional photon lasing. The resulting macroscopically occupied state then behaves as a non-equilibrium Bose-Einstein condensate of polaritons. 15,16 Although polariton lasing has been mainly observed at low temperature due to the small binding energy typical of Wannier-Mott excitons, 13 recent developments have led to room temperature demonstrations in III-nitrides and ZnO. 17,18,19,20 Frenkel excitons possess binding energies of ~ 1 eV and are thus highly stable at room temperature. 21 Organic polariton lasing was first demonstrated in microcavities containing anthracene single-crystals. 22,23 3The nonlinear character of polariton condensates leads to a wealth of fascinating phenomena such as superfluidity and the formation of dark solitons and vortices. 7,8,9,10,11 This nonlinearity, which in a microscopic pi...

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“…Polariton lasers with optical pumping have been realized in GaAs, CdTe and GaN [14,15] based planar, pillar [16,17], and photonic crystal [18] microcavities. They represent the first class of optoelectronic devices based on exciton-polaritons and possess unique characteristics including ultra-low threshold power, controllable polarization of emission, and peculiar statistics of emitted photons.…”

Section: Realization Of Polariton Lasers In Semiconductor Microcavitiesmentioning

confidence: 99%

Bosonic lasers: The state of the art (Review Article)

Kavokin

Liew

Schneider³

et al. 2016

Low Temperature Physics

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Bosonic lasers represent a new generation of coherent light sources. In contrast to conventional, fermionic, lasers they do not require inversion of electronic population and do not rely on the stimulated emission of radiation. Bosonic lasers are based on the spontaneous emission of light by condensates of bosonic quasiparticles. The first realization of bosonic lasers has been reported in semiconductor microcavities where bosonic condensates of exciton-polaritons first studied several decades ago by K.B. Tolpygo can be formed under optical or electronic pumping. In this paper we overview the recent progress in the research area of polaritonics, address the perspective of realization of polariton devices: from bosonic cascade lasers to spin transistors and switches.

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All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

Cited by 59 publications

References 18 publications

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Nonlinear interactions in an organic polariton condensate

Bosonic lasers: The state of the art (Review Article)

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