All-inorganic CdSe/PbSe nanoparticle solar cells

Sholin, Veronica; Breeze, Alison J.; Anderson, Ingrid E.; Sahoo, Yudhisthira; Reddy, D. Amaranatha; Carter, S.A.

doi:10.1016/j.solmat.2008.08.002

Cited by 38 publications

(30 citation statements)

References 41 publications

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“…46 Results on CdSe/PbSe nanocrystal solar cells also seem to lead to a similar conclusion: unless a LiF or Al 2 O 3 layer is inserted into the CdSe/PbSe interface; the cell does not function at all. 14 The results presented here are organized to clarify the following aspects of CdS/Sb 2 S 3 /PbSe solar cells:…”

Section: Electrical Conductivity and Energy Levels Of The Thin Films-mentioning

confidence: 99%

PbSe Thin Films in All-Chemically Deposited Solar Cells

Nair

Barrios‐Salgado

Capistrán

et al. 2010

J. Electrochem. Soc.

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We report on PbSe thin films serving as an absorber in solar cell structures, CdS͑100 nm͒/Sb 2 S 3 ͑250 nm͒/PbSe͑100-250 nm͒. The cells are prepared by sequential chemical deposition of the films on a commercial SnO 2 :F coated sheet glass. These cells show V oc of 690 mV and J sc of 3.5 mA/cm 2 and a conversion efficiency of 0.69% under sunlight. Two distinct routes are taken to deposit PbSe thin films of 100-250 nm thickness: N,N-dimethylselenourea ͑SU͒ or sodium selenosulfate ͑SS͒ as the source of selenide ions in the bath. These films are p-type with an electrical conductivity of 0.5 ͑⍀ cm͒ −1 and optical bandgaps of 0.68 eV ͑SU͒ and 0.85 eV ͑SS͒ at a film thickness of 150 nm. Without the PbSe absorber, a CdS/Sb 2 S 3 cell has V oc of 595 mV, but its J sc is low, 0.003 mA/cm 2 . In CdS/Sb 2 S 3 /PbSe ͑SU or SS͒ cells, J sc is higher by a factor of thousand, and it is consistently higher for a larger PbSe film thickness. Thus, PbSe performs the role of a p + optical absorber in the cell, contributing to the J sc of the cell.PbSe crystallizes in a rocksalt structure ͓face-centered cubic ͑fcc͒, a = 0.6147 nm, PDF 06-0354͔. The energy band analysis suggests that the extrema of the valence band and conduction band occur at the L-point of the fcc Brillouin zone. 1 The bandgap ͑L 6v + − L 6c ͒ is 0.145 eV at 4 K and 0.278 eV ͑E g direct͒ at 300 K. In the 100-400 K temperature range relevant to ͓photovoltaic ͑PV͔͒ device operation, bulk-PbSe exhibits a positive temperature coefficient for E g of 0.53 meV/K. The room-temperature bandgap of 0.28 eV of PbSe implies an optical absorption onset ͓ g ͑m͒ = 1.240/E g ͑eV͔͒ for electromagnetic radiation of wavelength 4.43 m. Hence, Wien's displacement law governing the wavelength of maximum spectral irradiance ͓ m ͑m͒ = 2890/T ͑K͔͒ from a black/gray body emitter suggests PbSe as an effective detector of radiation from heat sources with surface temperature 652 K ͑379°C͒. Thus, the application of PbSe as an IR detector and specifically for heat-seeking missile guidance in the post-1947 era was the initial motivation toward the development of thin-film techniques for this material. 2 Nanocrystalline PbSe and Solar CellsPrince and Loferski's, 3 and later on, Shockley and Quiesser's 4 efficiency analyses for the PV conversion of solar energy by semiconductor absorbers as a function of their optical bandgap ͑E g ͒ kept PbSe irrelevant with sub-1% conversion efficiency for solar radiation under the detailed balance scheme. This situation for PbSe as a solar cell absorber changed in the late 1990s. The concept of quantum dot ͑QD͒ solar cells, in which the electron-hole pairs generated by photons in a semiconductor nanocrystal could be transported into an external circuit by electron/hole transporters, 5 brought forth PbSe as a solar cell material. Until recently, it was also held that multiexciton generation ͑MEG͒, from a single energetic photon with energy greater than 2E g in a QD semiconductor could enhance the lightgenerated current density in solar cells toward the blue side of ...

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Section: Electrical Conductivity and Energy Levels Of The Thin Films-mentioning

confidence: 99%

PbSe Thin Films in All-Chemically Deposited Solar Cells

Nair

Barrios‐Salgado

Capistrán

et al. 2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…PbSe can be potentially employed in various areas, such as laser materials, solar cells, infrared detectors [3,4], near-IR luminescence [5], photographic planes, selective, photovoltaic absorbers [6] and thermoelectric devices [7].…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal synthesis and characterization of novel PbSe dendritic structures

Lv¹,

Wang²,

Qiu³

et al. 2010

Journal of Alloys and Compounds

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“…This led to CdSe nanoparticles to be used for opto-electronic devices, laser diodes, nanosensing and biomedical imaging [10]. They are also used in the design of high-efficiency solar cells [11][12][13].…”

Section: Introductionmentioning

confidence: 99%