All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

Kannan, V.; Chae, Yeon-Sik; Ramana, Ch. V. V.; Ko, Dong‐Sik; Rhee, Jin‐Koo

doi:10.1063/1.3573601

Cited by 17 publications

(16 citation statements)

References 16 publications

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“…Energy dispersive spectra (EDS) of the same layer showed presence of indium and excess oxygen, suggesting the presence of indium oxide. Our previous works with similar device structures but with different metals like aluminum and titanium yielded in analogous results [11][12][13]. The operating mechanism of such devices were described on the basis of charge trapping in a well-barrier structure where CdSe quantum dots act as trap centers and metal-oxide constitutes the barrier.…”

Section: Discussionmentioning

confidence: 81%

“…The memory device based on such structure can be expected to be much faster due to less tunneling time [7,10]. Quantum dots embedded in a partially oxidized thin aluminum/titanium layer exhibited bipolar bistable non-volatile memory characteristics with excellent ON/OFF ratio and ultrafast switching times (10 ns) [11][12][13]. In this report, we present the memory characteristics of the device with structure ITO/CdSe QD/InInOx/CdSe QD/In and present a comparative analysis of performance of the memory devices with different metals.…”

Section: Introductionmentioning

confidence: 99%

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Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

Kannan

Rhee

2012

Appl. Phys. A

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Controllable switching ratio in quantum dot/metal-metal oxide nanostructure based non-volatile memory deviceAbstract In this paper, we report a facile quantum dot/InInOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.

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Section: Discussionmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

Kannan

Rhee

2012

Appl. Phys. A

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“…After incubation at room temperature for 24 h, impurities and ZnO NPs were separated into two layers due to the difference in density, and pure ZnO NPs were obtained through centrifugation. Finally, the synthesized ZnO NPs were dispersed in ethanol at an appropriate concentration (20 mg/mL) [45].…”

Section: Synthesis Of Semiconductor Nanocrystal Zno Nanoparticles (Nps)mentioning

confidence: 99%

“…As the QDs are embedded in the partially oxidized aluminum layer, NCs are formed. Since the formation of the NCs allows the QDs formed at the bottom and the QDs formed at the top to be isolated from each other, it can be applied as a bi-stable memory [22,45,47]. In the AFM result of forming only QDs as a thin film in…”

Section: Nanocluster(nc) Verificationmentioning

confidence: 99%

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

et al. 2021

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A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al2O3/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al2O3) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 103. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.

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“…NC‐based memory devices have received great attention as next‐generation non‐volatile memory due to their scalability, small size, reliability, and high write/read/erase speeds . Various NCs of metals, semiconductors, and oxides have been proposed as charge‐trap sites in the floating gates of flash memories and as switchable resistive materials in resistive random‐access memories . Here, we focus on NC‐based flash memory.…”

Section: Applicationsmentioning

confidence: 99%

Designed Assembly and Integration of Colloidal Nanocrystals for Device Applications

et al. 2015

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Colloidal nanocrystals have been intensively studied over the past three decades due to their unique properties that originate, in large part, from their nanometer-scale sizes. For applications in electronic and optoelectronic devices, colloidal nanoparticles are generally employed as assembled nanocrystal solids, rather than as individual particles. Consequently, tailoring 2D patterns as well as 3D architectures of assembled nanocrystals is critical for their various applications to micro- and nanoscale devices. Here, recent advances in the designed assembly, film fabrication, and printing/integration methods for colloidal nanocrystals are presented. The advantages and drawbacks of these methods are compared, and various device applications of assembled/integrated colloidal nanocrystal solids are discussed.

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All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

Cited by 17 publications

References 16 publications

Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

Designed Assembly and Integration of Colloidal Nanocrystals for Device Applications

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