All-metal oxide transparent photodetector for broad responses

Abbas, Sohail; Kim, Sangho

doi:10.1016/j.sna.2020.111835

Cited by 33 publications

(37 citation statements)

References 55 publications

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“…5c. The rise time is the τ r , the time it takes by the device to reach 90% from 10% and the fall time is τ f , the time it takes by the device to decay from 90 to 10% 36,38,39 . We found a rise time of 180 ms and a fall time of 360 ms, which are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…For example, responsivity (R), detectivity (D), the normalized photocurrent to a dark current ratio (NPDR), and the noise equivalent power (NEP) with variation of incident light power intensities were calculated. The www.nature.com/scientificreports/ responsivity ( R = J p /P in ), where J p is the photocurrent density and P in is input power per area, and the detectivity ( D = R/ √ 2qJ d ), where q is the elementary charge and J d is the dark current density, are significant facets of the photo detector 36,38,39 , which is shown in Fig. 6a.…”

Section: Resultsmentioning

confidence: 99%

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NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Hussain

Jaffery

Ali

et al. 2021

Sci Rep

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Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, and the noise equivalent power (NEP) of 1.22 × 10–13 WHz−1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Hussain

Jaffery

Ali

et al. 2021

Sci Rep

Self Cite

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“…Similarly, the device having a lower dark current provides the higher detectivity. Thus, the greater values of both R and D are an important feature of an efficient photodetector 67,58,66 . Our photodetector, based on p-GeSe SBD, showed a high responsivity of 280 mAW −1 and a detectivity of 4.1 × 10 9 jones with a power intensity of 132 mW cm −2 .…”

Section: Resultsmentioning

confidence: 99%

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Hussain

Aftab

Jaffery

et al. 2020

Sci Rep

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2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 10 9 Jones, 3 × 10 7 W −1 , 9.1 × 10 −12 WHz −1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies. Two-dimensional (2D) materials have chronically been the most widely studied materials, particularly after the successful scotch tape test to exfoliate graphene by Andre Geim and Kostya Novoselov in 2004 1. 2D materials possess excellent electrical and mechanical properties toward diverse electronic device applications. Graphene, being the prototype of 2D materials 2,3 , has been studied broadly for its exotic electrical, optical, and mechanical properties 3,4. Besides, the group-IV transition metal dichalcogenides (TMDs) having a bandgap of around 1 to 2 eV 5-7 have attracted increasing interest because of their promising electronic and optoelectronic device applications 3,8-21. Graphene possesses extremely high carrier mobility (>10 5 cm 2 V −1 s −1), but the absence of band gap limits its electronic and optoelectronic applications 22. Therefore, TMDs with the properties of graphene-like stature, bandgap tunability, weak van der Waals-like forces and stability have intrigued the interest of the scientific community. TMDs are the family of 2D materials having the chemical composition of MX 2 , where M stands for the transition metal elements (M = Mo, W, Ta, Ge…etc) and X for the chalcogen elements (X = Se, S and Te). Among TMDs, Ge-based materials are preferred for applications due to their abundance on earth and environmentally friendly nature 23. With Se, the p-type Germanium from a narrow bandgap semiconductor material as p-GeSe having exciting application in near-infrared (NIR) photodetectors and electron tunnelling devices. p-GeSe has an indirect bandgap of 1.08 eV in the bulk 24,25 , and a direct bandgap of ~1.7 eV in monolayers 24,26,27. Few layers of p-GeSe can be obtained from bulk by mechanical exfoliation method 28. Among the many applications, p-GeSe shows tremendous capability in the realm of photovoltaics, because of its excellent optical, material and electrical properties. Therefore, it is well known as substitution of phosphorene 29. Moreover, GeSe is considered as an amb...

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“…To date, most research consideration of photodetectors has been devoted to the vertical structures [11][12][13][14], whereas lateral photodetector architectures [15][16][17] have attracted increasing attention lately due to their ease of fabrication. A variety of promising materials, such as wide band gap semiconductor metal oxides [18,19], methylammonium lead halide perovskites [20], and transition metal dichalcogenides [9,21] have been used for lateral PDs. The metal oxide-based photodetector suffers from persistent photoconductivity due to their native defects which slow the photoresponse [22].…”

Section: Introductionmentioning

confidence: 99%

“…Numerous efforts have been made to overcome these obstacles, for instance, by incorporating small molecules [26], using an efficient electron transport layer [27], blending of acceptor and donor materials [28], and integrating conventional semiconductors such as metal oxides and functional 2D materials [14,19]. For instance, Chen et al proposed the multilayer structure of organic/inorganic materials for attaining high responsivity in hybrid photodetectors [29].…”

Section: Introductionmentioning

confidence: 99%

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

et al. 2022

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Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

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All-metal oxide transparent photodetector for broad responses

Cited by 33 publications

References 55 publications

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

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