All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

Abstract

We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 mm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8 , the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80 C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.

Polarization Bistable Characteristics of 1.55 µm Vertical-Cavity Surface-Emitting Lasers

“…The shape and sizes of the mesa-structure top distributed Bragg reflector (DBR) and the active layer of the VCSELs were designed by us; the devices were fabricated by RayCan Co. The VCSEL structure 11) was monolithically grown by low-pressure metal-organic vapor phase epitaxy on an InP substrate. The active region was 0.5 thick and consisted of strain-compensated MQWs.…”

Polarization and Time-Resolved Dynamics of a 1550-nm VCSEL Subject to Orthogonally Polarized Optical Injection

“…The slave laser was a commercially available InAlGaAs/InP QW 1550-nm VCSEL [36]. The device had a threshold current of 1.8 mA at 293 K. The optical spectrum of the device which appears in the inset in Fig.…”

Brillouin light scattering investigations of films and magnetic tunnel junctions with perpendicular magnetic anisotropy at the CoFeB–MgO interface

“…In the calculations for both the single film and the MTJ, the nn interlayer exchange constant and the nn interlayer distance of the CoFeB film were fixed to the values taken from literature: A ex i,i+1 = 1.9 × 10 −6 erg cm −1 [25] and d = 1.43 × 10 −8 cm [26,27], respectively. The ferromagnetic nn interlayer exchange energy density is thus J i,i+1 = A ex /d ≈ 1.33 × 10 2 erg cm −2 .…”