All new nickel based Metal Core Organic Cluster (MCOC) resist for N7+ node patterning

Sharma, Satinder K.; Kumar, Rudra; Chauhan, Manvendra Singh; Moinuddin, Mohamad G.; Peter, Jerome; Ghosh, Subrata; Pradeep, Chullikkattil P.; Gonsalves, Kenneth E.

doi:10.1117/12.2552189

Cited by 8 publications

(11 citation statements)

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“…The high sensitivity to helium ions of the inorganic HafSOx resist (designed for EUV lithography) has been explored [117] and the unique potential to use HIBL to pre-screen EUV resists has been evaluated [118][119][120]. The advantages of HIBL have also been highlighted using a number of other novel resists, including a fullerene-based molecular resist [121], a tetracene molecular resist [122], and various organic-inorganic resists [123][124][125][126][127][128][129]. The enhanced sensitivity of resists to helium ions has been attributed to the higher secondary electron emission yield and the fact that the helium ions deposit their energy over much shorter distances in the resist, thus increasing the local energy density.…”

Section: Sub-10 Nm Patterningmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

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Section: Sub-10 Nm Patterningmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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“…There are several novel approaches being investigated to support future patterning needs for high resolution and sensitivity with low line width roughness and no stochastic defects. [1][2][3] Defectivity due to pattern collapse, bridging or breaking is an increasingly common failure mode at pitches below 32 nm.…”

Section: Introductionmentioning

confidence: 99%

Recent accomplishments in EUV lithography patterning for multi-trigger resist

Popescu¹,

O'Callaghan²,

McClelland³

et al. 2022

International Conference on Extreme Ultraviolet Lithography 2022

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EUV lithography is becoming established in high volume manufacturing but there are still many challenges to be overcome within the ecosystem including next generation exposure tools and the materials used in the patterning stack. EUV photoresists with the appropriate capability to support future roadmap requirements such as high-NA remain a high priority area of research. EUV photons have significantly higher energy than in previous photolithographic techniques, and the resist is exposed by radiation chemistry routes rather than the well-known photochemistry from earlier nodes. In addition, resists must contend with much higher photon-shot noise, require high EUV absorbance to offset the need for very thin films, especially in High-NA EUV, where the depth of focus will be less than 20 nm, and ultimately the theoretical resolution limits of EUV will approach the size of typical photoresist molecules. We are developing a new type of photoresist based on the multi-trigger concept, which seeks to suppress line edge roughness using a new photoresist mechanism, and which is based on molecular rather than polymeric materials to maximize resolution.Here we present results showing improved lithography accomplishments due to the enhancement of the highopacity multi trigger resist system. We present a range of process conditions and formulation variations including substrate changes which impact roughness and defectivity. The lithographic performance at pitch 28 nm patterned on an ASML NXE3400 scanner is presented on a variety of substrates. Lines with a width of 12.5 nm can be patterned at 59 mJ/cm 2 with a biased LWR of 3.9 nm using a resist spun on the Brewer Optistack AL412 underlayer (12 nm thickness). We also present results on SOG/SOC stacks and the optimization required of the substrate to improve LWR and decrease defectivity. We further present results where we have been targeting sub-30 mJ/cm 2 patterning. Introducing an alternative PAG but maintaining constant formulation and process conditions has enabled the patterning of p28 lines lines/spaces, with 12 nm lines having been patterned at a dose of 17.5 mJ/cm 2 and a film thickness of 14.5 nm. Work is continuing to reduce the LWR whilst maintaining a sub 30 mJ/cm 2 dose. Multi-trigger resist has also been used to pattern pillars arranged in a hexagonal pattern. We show results at pitch 36 nm, again patterned on an ASML NXE3400, exposed at 66 mJ/cm 2 to obtain a pillar diameter of 18 nm with a biased LCDU of 3.6 nm. We also show pitch 34 nm hexagonal pillars, patterned at 65 mJ/cm 2 to obtain a pillar diameter of 17 nm with a biased LCDU of 3.6 nm with a focus window of over 60 nm. A film thickness of 22 nm was used. Additionally, carefully controlling the rates of the various reactions in the MTR mechanism, we have shown that we can reduce the dose required for 19 nm diameter hexagonally arranged pillars at p34 to 28 mJ/cm 2 with a biased LCDU of 4.3 nm using a 17 nm resist film thickness.

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“…The biggest challenges for the successful implementation of EUVL for leading-edge logic devices and likely for futuristic fab-out DRAM, is the unavailability of compatible defect-free photoresists and mechanistic rapport to the scaling of feature size down to single-digit resolution 12 , 17 – 19 Note that there is no program to make through the direct write (maskless) tools, including electron beam lithography (EBL) 20 – 26 and helium ion beam lithography (HIBL) for mass production of IC chips to date 20 , 27 – 29 It suggests maskless tools can be used to counter the scarcity of rarely accessible EUV tools to resist developers for screening/prototyping of the futuristic logic nodes resists and low-volume production.…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) tradeoff for chip fabricators, which is currently extremely limited. Aim:The development of EUV resist to balance RLS trade-off as well as overcome throughput limitations of h-NA EUV system to facilitate high volume semiconductor manufacturing.Approach: Here, we developed indium-methacrylic acid-based metal-organic clusters resist for h-NA, EUVL. To examine the h-NA single exposure patterning potential of the resist, prescreening by sub-10 nm next-generation lithography (NGL) tools such as electron beam lithography (EBL), and helium ion beam lithography (HIBL) were conducted as a prelude to EUV exposure.Results: Dense ∼13 nm, (l/s) patterns at ∼45 and ∼30 μC∕cm 2 were well resolved by EBL and HIBL, on the top this the line edge roughness (LER) was 2.48 AE 0.04 nm, and etch resistance ∼1.98 and ∼0.34 times lower than Si and SiO 2 ∕Si systems. Also, In-MAA MOCs resist shows ultra-sensitivity of 2.3 mJ∕cm 2 towards h-NA EUVL for patterning up to 26 nm half-pitch line patterns with LER ∼2.36 AE 0.16 nm.

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All new nickel based Metal Core Organic Cluster (MCOC) resist for N7+ node patterning

Cited by 8 publications

References 0 publications

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Recent accomplishments in EUV lithography patterning for multi-trigger resist

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

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