A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen, Frances

doi:10.3762/bjnano.12.52

Cited by 47 publications

(37 citation statements)

References 249 publications

(383 reference statements)

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“…[ 14 ] Current nanofabrication using HIM generally falls into two categories. [ 15 ] The first is to induce local defects and ion implantation using a low dose of helium ions. The second is to use focused helium ions to induce local material addition using gas‐assisted deposition, [ 16 ] material transition such as resist conversion, [ 7c ], [ 14 ] or material removal using a high dose of helium ions.…”

Section: Introductionmentioning

confidence: 99%

3‐D Nanofabrication of Silicon and Nanostructure Fine‐Tuning via Helium Ion Implantation

Wen

Mao

2022

Adv Materials Inter

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Despite the continued scaling down of semiconductor manufacturing, traditional lithography‐based nanofabrication only produces thin film structures, not 3‐D shapes. 3‐D nanofabrication remains a major challenge, especially for semiconductor materials. Most 3‐D nanofabrication techniques, such as two‐photon printing and stereolithography, mostly work for polymer materials, not solid‐state semiconductor materials. Here, a method capable of fabricating sophisticated 3‐D nanostructures of silicon based on the subsurface swelling phenomenon using focused helium ion swelling is reported. Silicon nanosphere arrays, hierarchical nanospheres mimicking compound lenses, nano‐Taichi symbols, three‐layer nanotowers, and nanopumpkins have been demonstrated, which are challenging for existing nanofabrication technology. The produced silicon nanostructures exhibit super small surface roughness as small as 0.1 nm, two orders of magnitude better than existing 3‐D nanofabrication technologies normally above 10 nm. The super small surface roughness opens doors for many exciting applications in photonics, indicating small photon losses. Moreover, it is demonstrated ultraprecise fine‐tuning of critical dimensions of ready‐made nanostructures or nanodevices, such as tuning the tilting angle of the tip on the atomic force microscopy probe and reducing the nanogap between two metal electrodes from 200 to 4 nm, which is promising for improving nanodevice performances by tuning the critical dimensions to desired ranges.

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Section: Introductionmentioning

confidence: 99%

3‐D Nanofabrication of Silicon and Nanostructure Fine‐Tuning via Helium Ion Implantation

Wen

Mao

2022

Adv Materials Inter

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“…[37] Due to high resolution and sensitivity, the HIM has been used to fabricate nanostructured components, devices, or systems for integrated circuits, materials sciences, nano-optics, and bio-sciences applications. [36,38] For example, the helium ion beam milling can be used to fabricate nanopores (diameter < 6 nm) with high reproducibility for biological applications. [39] The neon ion beam milling in HIM offers a faster milling rate and good pattern fidelity for applications such as semiconductor processing, [40,41] pattern repair, [42] and failure analysis.…”

Section: Introductionmentioning

confidence: 99%

“…[44] Special types of metallic nanopillars and NWs (e.g., Pt and W) have been fabricated with helium FIBID by controlling the processing parameters for different applications. [36] Cordoba et al fabricated WC nanopillars with helical 3D geometry having specific superconducting properties using helium FIBID with the gaseous precursor W(CO) 6 . [45,46] Complex Pt nanopillar-based 3D mesh objects with sizes in the sub-micrometer domain were also fabricated using helium FIBID, and supported by Monte Carlo simulations.…”

Section: Introductionmentioning

confidence: 99%

Nano‐Kirigami Structures and Branched Nanowires Fabricated by Focused Ion Beam‐Induced Milling, Bending, and Deposition

Xia

Notte

2022

Adv Materials Inter

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stress or external forces. The external forces could include capillary force, [6] mechanical force, [7] thermal effects, [8] etc. Additionally, there are methods for the fabrication of 3D functional micro and nanostructures: gas-assisted focused electron beam-induced deposition (FEBID) and focused ion beam-induced deposition (FIBID), both of which use volatile organic and organometallic precursors. [9] Both FEBID and FIBID processes enable the direct-write fabrication of complex 3D nanostructures with feature dimensions below 50 nm, resulting in pore-free, nanometer-smooth high-fidelity structures with increasing choice of deposited materials via novel precursors. FEBID has recently evolved from a trial-anderror laboratory method to a predictable 3D nano-printing technology with unique advantages. [10] Kirigami, the art of cutting and folding a membrane to create versatile shapes, is an example of a transformational process allowing the creation of 3D structures from a 2D membrane. [11] Since the cutting of 2D patterns into a membrane at the nanoscale is well-established in recent years, nano-kirigami has offered new opportunities to explore the applications for 3D optical devices. [11,12] The 3D nano-kirigami and origami structures have promising optical and photonic functionality in giant optical chirality, [13] metasurfaces, [3,14,15] and plasmonics. [16] Commonly, the 2D substrates which are patterned for nanokirigami and origami are metal (e.g., Au), dielectric (e.g., Si 3 N 4 ), or bilayer (e.g Au on Si 3 N 4 ). Typically, these films are less than 100 nm thick and are free-standing, that is, not directly supported by a substrate. The techniques for introducing the precise cuts into these substrates include e-beam method [3,17] and focus ion beam (FIB) milling. [13,14,16] Recent e-beam lithography methods involve photoresist deposition, e-beam exposure, thin film deposition, etching, and removal of photoresist. With e-beam patterning methods, various resist nano-kirigami structures and multiscale metallic patterns can be fabricated with enhanced efficiency and precision to provide more choices of patterning solution for broader applications. [18,19] In contrast, FIB milling is more widely used because it allows for simple and direct writing (cutting) of the patterns on the 2D material. Because of their widespread commercial availability, the gallium FIB (Ga-FIB) is the routine FIB instrument for these 3D nanostructures hold the key to building custom devices with special and flexible functionalities. Ion beam-induced bending and folding are used for the fabrication of 3D nanostructures from prepared 2D nano-patterned membranes. Tensile and compressive stresses can be introduced within the layers of a thin membrane under ion beam irradiation to manipulate and control the formation of nano-kirigamis. Both localized and broader ion beam irradiation can be used to induce bending in the membrane with remarkable control of the bending angle and direction. In this work, an approach to fabricate nano-kirigamis with...

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“…В этом контексте ионная литография представляется одним из самых перспективных методов достижения нанометрового разрешения, поскольку для ионов размер зоны взаимодействия со структурируемым материалом составляет десятки нанометров, что гораздо меньше, чем у электронов или УФ и рентгеновских квантов. Однако в настоящее время ионный пучок используется в основном для распыления материала [3][4][5] и ионно-стимулированного осаждения [5,6]. Для этих методов характерна низкая энергетическая эффективность.…”

Section: Introductionunclassified

Ионно-Лучевая Литография: Моделирование И Аналитическое Описание Поглощенной В Резисте Энергии

Шабельникова¹,

Зайцев²

2022

Журнал Технической Физики

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The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second – the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as "Range" or "mean length of trajectories"), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens keV. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this.

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A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Cited by 47 publications

References 249 publications

3‐D Nanofabrication of Silicon and Nanostructure Fine‐Tuning via Helium Ion Implantation

3‐D Nanofabrication of Silicon and Nanostructure Fine‐Tuning via Helium Ion Implantation

Nano‐Kirigami Structures and Branched Nanowires Fabricated by Focused Ion Beam‐Induced Milling, Bending, and Deposition

Ионно-Лучевая Литография: Моделирование И Аналитическое Описание Поглощенной В Резисте Энергии

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