All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory

Yang, Jin; Yuan, Yuzhuo; Liu, Yunpeng; Du, Lulu; Wang, Yiming; Hu, Zhenjia; Wang, Qingpu; Zhou, Li; Xin, Qian; Song, Aimin

doi:10.1109/led.2018.2877589

Cited by 7 publications

(4 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Then some improved IGZO/SnO inverters [10,11] , NAND [12] , NOR [13] , and XOR [13] gates were demonstrated in the following years. By cascading these basic logic gates, we have also realized a D-latch (Figure 4(c)) [13] , a 1-bit full-adder (Figure 4(d)) [13] , and RAM (Figure 4(e)) [14] based on IGZO and SnO TFTs. These are the essential components for the central processing unit.…”

Section: Cmos Electronicsmentioning

confidence: 99%

“…Thus such device has the potential to realize a higher intrinsic voltage gain, A V , as it equals . For an IGZO SGT with an IGZO thickness of 20 nm, the average [13], [14], and [16]. Copyright © 2018,2019, IEEE.…”

Section: Novel Oxide Tftsmentioning

confidence: 99%

“…Here, we review our recent work on a) high-performance oxidebased Schottky diodes with an ideality factor of 1.09, ultra-low noise, and operating speed >20 GHz on glass [2] and 2.45 GHz on flexible substrate [3] ; b) IGZO TFTs capable of reaching a benchmark speed of 1 GHz [4] , which are, to the best of our knowledge, the fastest oxide-based diodes and transistors to date; c) a few different methods to achieve IGZO TFTs capable of onevolt operations [5][6][7][8][9] ; d) CMOS-like oxide logic gates and functional circuits including inverters with a gain up to 150 [10,11] , NAND gate [12] , D-latch [13] , 51 stage ring oscillator [13] , complementary static random access memories [14] , and a one-bit full adder [13] , etc, by integrating SnO-based p-type TFTs with IGZO-based n-type TFTs; and finally e) novel oxide TFTs with a Schottky source contact that show no short channel effect, almost total immunity to negative bias illumination stress, and have a gain over two orders of magnitude higher than that of a typical silicon transistor [15] .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

8.4: Invited Paper: Oxide devices for displays and low power electronics

Zhang

Cai

Wilson

et al. 2019

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

Oxide semiconductors have been envisaged to find applications in flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences. However, there are still several bottlenecks to overcome in order to realise this goal, especially the lack of oxide‐semiconductor components fast enough for wireless communications, low power oxide transistors, and high‐performance p‐type oxide semiconductors for complementary circuits. Here we review our recent work to address these problems, including gigahertz operating IGZO Schottky diodes and TFTs, 1 V operating TFTs, complementary circuits using IGZO and SnO TFTs, and a novel TFT structure with unique performance.

show abstract

Section: Cmos Electronicsmentioning

confidence: 99%

Section: Novel Oxide Tftsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

8.4: Invited Paper: Oxide devices for displays and low power electronics

Zhang

Cai

Wilson

et al. 2019

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

show abstract

“…Among all semiconductor devices, all-oxide semiconductor devices have excellent chemical stability and low-cost fabrication methods, so they have potential applications in optoelectronic device fabrication [17,18]. Meanwhile, the introduction of semiconductor heterostructures into the fabrication of optoelectronic devices is a promising approach.…”

Section: Introductionmentioning

confidence: 99%

Facile fabrication and enhanced photoresponse of CuO/β-Ga₂O₃ nanostructure photodetector

Du¹,

Yu²,

Wu³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

CuO/β-Ga2O3 hybrid structures with β-Ga2O3 nanorods coated with CuO nanoparticle layers were successfully synthesized by a multi-cycle dipping and annealing process method. Compared with bare β-Ga2O3 nanorods, the CuO/β-Ga2O3 hybrid structures had greatly enhanced and dramatically broadened responses to light in the range from the near-ultraviolet to visible light. This novel synthetic pathway will provide new possibilities to prepare nanomaterials that integrate oxide heterojunctions for photodetection applications.

show abstract

Stretchable and Wearable Resistive Switching Random‐Access Memory

Shi

Wang

Aziz

et al. 2020

Advanced Intelligent Systems

View full text Add to dashboard Cite

In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in storage and processing at any time. This propounds a strong demand for the stretchable and wearable memory devices with ultrafast switching, high density, and high energy efficiency. Herein, an overview of the advanced progresses made on developing stretchable resistive switching random‐access memory (RRAM) is presented, concentrating on the fundamental components, materials selection principles, and configuration design strategies. The basic electrical and mechanical properties of stretchable components to meet the functionality of memory storage are summarized. Novel materials with the intrinsically stretchable features toward the realization of stretchable RRAM are discussed. Ingenious configuration design strategies to obtain stretchable RRAM are evaluated. Finally, the challenges and perspectives for the practical applications of stretchable RRAM are also addressed. Some helpful guidelines are provided in promoting the development on stretchable and wearable RRAM for making deployable and portable artificial intelligence and smart devices.

show abstract

All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory

Cited by 7 publications

References 20 publications

8.4: Invited Paper: Oxide devices for displays and low power electronics

8.4: Invited Paper: Oxide devices for displays and low power electronics

Facile fabrication and enhanced photoresponse of CuO/β-Ga₂O₃ nanostructure photodetector

Stretchable and Wearable Resistive Switching Random‐Access Memory

Contact Info

Product

Resources

About

All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory

Cited by 7 publications

References 20 publications

8.4: Invited Paper: Oxide devices for displays and low power electronics

8.4: Invited Paper: Oxide devices for displays and low power electronics

Facile fabrication and enhanced photoresponse of CuO/β-Ga2O3 nanostructure photodetector

Stretchable and Wearable Resistive Switching Random‐Access Memory

Contact Info

Product

Resources

About

Facile fabrication and enhanced photoresponse of CuO/β-Ga₂O₃ nanostructure photodetector