All-Plasmonic IQ Modulator With a 36 μm Fiber-to-Fiber Pitch

Ayata, Masafumi; Fedoryshyn, Yuriy; Heni, Wolfgang; Josten, Arne; Baeuerle, Benedikt; Haffner, Christian; Hoessbacher, Claudia; Koch, Ueli; Salamin, Yannick; Elder, Delwin L.; Dalton, Larry R.; Leuthold, Juerg

doi:10.1109/jlt.2019.2900797

Cited by 13 publications

(15 citation statements)

References 25 publications

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“…Furthermore, when implemented in a nested Mach-Zehnder configuration, they offer most-compact 100 GBd complex modulation [33], [40] with sub-1V pp driving electronics and efficient 400 Gb/s modulation on SiP [33]. The large EO bandwidth of the POH modulator is enabled by the compact size of the modulator.…”

Section: B High-speed Plasmonic Modulatormentioning

confidence: 99%

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Heni

Baeuerle

Mardoyan

et al. 2020

J. Lightwave Technol.

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We demonstrate a 222 GBd on-off-keying transmitter in a short-reach intra-datacenter scenario with direct detection after 120 m of standard single mode fiber. The system operates at net-data rates of >200 Gb/s OOK for transmission distances of a few meters, and >177 Gb/s over 120 m, limited by chromatic dispersion in the standard single mode fiber. The high symbol rate transmitter is enabled by a high-bandwidth plasmonic-organic hybrid Mach-Zehnder modulator on the silicon photonic platform that is ribbon-bonded to an InP DHBT 2:1 digital multiplexing selector. Requiring no driving RF amplifiers, the selector directly drives the modulator with a differential output voltage of 622 mV pp measured across a 50 Ω resistor. The transmitter assembly occupies a footprint of less than 1.5 mm × 2.1 mm.

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Section: B High-speed Plasmonic Modulatormentioning

confidence: 99%

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Heni

Baeuerle

Mardoyan

et al. 2020

J. Lightwave Technol.

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“…3,12 This builds up response but at the price of reduced bandwidth. The most common strip-line devices include phase modulators, 40,57 amplitude or Mach− Zehnder modulators, 48,57,66,72,75,77 and in-phase-quadrature modulators 43,51,52,57,67,69,88 (Figure 17). A Mach−Zehnder modulator is composed of two phase modulators, and an IQ modulator is composed of two Mach−Zehnder modulators.…”

Section: Role Of Device Architecture On Devicementioning

confidence: 99%

Organic Electro-Optics and Optical Rectification: From Mesoscale to Nanoscale Hybrid Devices and Chip-Scale Integration of Electronics and Photonics

Elder

Dalton

2022

Ind. Eng. Chem. Res.

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The performance of electro-optic devices based on organic second order NLO materials has been improved by orders of magnitude through theory-guided improvement in the electrooptic activity and other relevant properties of organic materials and by field compression of radio frequency (RF) and optical fields associated with the transition from microscale/mesoscale devices to silicon−organic hybrid (SOH) and plasmonic−organic hybrid (POH) devices with nanoscopic dimensions. This paradigm shift in organic electro-optic R&D has led to many performance improvements, including record performance for voltage-length performance of less than 50 V-μm, energy consumption of less than 70 attojoules/bit, bandwidths of greater than 500 gigahertz (GHz), and device footprints of less than 20 μm 2 . Another consequence of improving electro-optic performance is the corresponding improvement of the converse second order nonlinear optical property of optical rectification (transparent photodetection). Theory has permitted identification of optimum optical nonlinearity/transparency values and dipole moments for newly developed chromophores, which have led, in turn, to state-of-the-art materials and device performance.

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“…Further progress in the reduction of the driving voltage level was reported in other studies, [ 58,59 ] demonstrating that a peak‐to‐peak drive voltage of 330 m V pp is sufficient to operate the plasmonic transmitter in C band at 120 Gbps non return to zero (NRZ) On‐Off Keying (NRZ‐OOK). A further research line concerned the development of integrated IQ modulators based on single MZ designs, see the study by Heni et al, [ 60 ] where an IQ version of the MZMs described in the study by Heni et al [ 55 ] was proposed, and the study by Ayata et al [ 41 ] presenting the IQ version of the MZM in the study by Ayata et al [ 61 ] , see Figure 2, below. The modulator interaction length was 16 μm; the fiber‐to‐fiber losses across several devices were between 28 and 37 dB with a peak amplitude of the driving voltage, see the study by Ayata et al [ 41 ] , Section IV,

V_{normalp} = 2.5

Section: Mz Organic Modulatorsmentioning

confidence: 99%

“…A further research line concerned the development of integrated IQ modulators based on single MZ designs, see the study by Heni et al, [ 60 ] where an IQ version of the MZMs described in the study by Heni et al [ 55 ] was proposed, and the study by Ayata et al [ 41 ] presenting the IQ version of the MZM in the study by Ayata et al [ 61 ] , see Figure 2, below. The modulator interaction length was 16 μm; the fiber‐to‐fiber losses across several devices were between 28 and 37 dB with a peak amplitude of the driving voltage, see the study by Ayata et al [ 41 ] , Section IV,

V_{normalp} = 2.5

V. We finally mention a recent, simpler modulator concept proposed in the study by Messner et al [ 62 ] that is based on a metal–insulator–metal (MIM) microstrip‐like PS, where the OEO material is 120 nm thick and the strip width is 4 μm. The fiber‐to‐fiber insertion loss is 11 dB for a 11 μm shifter and modulation up to 100 Gbps is demonstrated both in the C and O band, with a peak voltage of 2.6 V.…”

Section: Mz Organic Modulatorsmentioning

confidence: 99%

Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling

Tibaldi

Ghomashi

Bertazzi

et al. 2021

Physica Status Solidi (a)

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Herein, an overview on the physics‐based and system‐oriented modeling of organic electro‐optic Mach–Zehnder modulators for optical communication systems is presented. State‐of‐the‐art solutions in electro‐optic organic materials and modulator designs are reviewed, with particular stress on silicon organic hybrid (SOH) and plasmonic organic hybrid (POH) solutions. Then, the physics‐based simulation of concentrated and traveling‐wave modulators is discussed both through 3D optical simulations and a combination of 2D and 3D models, where the modulator is partitioned into convenient subdomains. Neural network behavioral models are finally discussed and case studies are proposed on the physics‐based and system‐level simulation of SOH and POH Mach–Zehnder modulators.

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All-Plasmonic IQ Modulator With a 36 μm Fiber-to-Fiber Pitch

Cited by 13 publications

References 25 publications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Organic Electro-Optics and Optical Rectification: From Mesoscale to Nanoscale Hybrid Devices and Chip-Scale Integration of Electronics and Photonics

Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling

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