Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Heni, Wolfgang; Baeuerle, Benedikt; Mardoyan, H.; Jorge, F.; Estaran, Jose; Konczykowska, A.; Riet, M.; Duval, B.; Nodjiadjim, Virginie; Goix, M.; Dupuy, Jean-Yves; Destraz, Marcel; Hoessbacher, Claudia; Fedoryshyn, Yuriy; Xu, Huajun; Elder, Delwin L.; Dalton, Larry R.; Renaudier, Jérémie; Leuthold, Juerg

doi:10.1109/jlt.2020.2972637

Cited by 52 publications

(47 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, such directly modulated sources are bandwidth limited and higher symbol rates are hard to achieve 1 . Externally modulated sources and external modulators offer a photonic high-speed alternative, and photonic solutions based on lithium niobate 8,9 , indium phosphide [10][11][12][13][14][15][16][17][18] , silicon [19][20][21][22][23][24][25] and plasmonics [26][27][28][29] have emerged for intensity modulation and direct detection (IM/DD) systems. So far, heterogeneous transmitters in bondwire assembly 14,17,25,29 have shown the highest symbol rates, achieving 222 GBd with plasmonics 29 , 192 GBd with indium phosphide photonics 17 , and 56 GBd with silicon photonics 25 .…”

Section: Introductionmentioning

confidence: 99%

A monolithic bipolar CMOS electronic–plasmonic high-speed transmitter

Koch

Uhl

Hettrich³

et al. 2020

Nat Electron

Self Cite

109

View full text Add to dashboard Cite

In order to address the challenge of increasing data rates, next generation optical communication networks will require the co-integration of electronics and photonics. Heterogeneous integration of these technologies has shown promise, but will eventually become bandwidth limited. Faster monolithic approaches will, therefore, be needed, but monolithic approaches using complementary metal-oxide-semiconductor (CMOS) electronics and silicon photonics are typically limited by their underlying electronic or photonic technologies. Here, we report a monolithically integrated electro-optical transmitter that can achieve symbol rates beyond 100 GBd. Our approach combines advanced bipolar CMOS with silicon plasmonics, and addresses key challenges in monolithic integration through the co-design of the electronic and plasmonic layers, including thermal design, packaging, and a nonlinear organic electro-optic material. To illustrate the potential of our technology, we develop two modulator conceptsan ultra-compact plasmonic modulator and, alternatively, a silicon-plasmonic modulator with photonic routing -both directly processed onto the bipolar CMOS electronics.

show abstract

Section: Introductionmentioning

confidence: 99%

A monolithic bipolar CMOS electronic–plasmonic high-speed transmitter

Koch

Uhl

Hettrich³

et al. 2020

Nat Electron

Self Cite

109

View full text Add to dashboard Cite

show abstract

“…However, these features come at the cost of millimetre dimensions. In contrast, with device architectures based on a silicon slot waveguide 34 , 35 , 52 , 53 or a metal–insulator–metal plasmonic slot waveguide 23 – 28 , which are deployed in SOH and POH modulators, both optical and electrical fields could be tightly confined into nanoscopic dimensions with enhanced nonlinearities and concentrated electrical field, thereby reducing the π-voltage–length product in EO modulators, and shrinking the footprint to sub-millimetre 54 , 55 or micrometre 23 – 28 scales. The waveguide architecture of our device could be further optimized to realize a more compact footprint, which is of utmost importance in view of future ultra-dense high-speed parallelized interconnects to facilitate dense modulator arrays 56 , 57 for space-division multiplexing applications, and enable advanced complex modulations on a more compact footprint for coherent communications 45 , 58 .…”

Section: Resultsmentioning

confidence: 99%

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

et al. 2020

View full text Add to dashboard Cite

To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an exceptional signal fidelity retained at extremely-high ambient temperatures up to 110 °C and even after long-term exposure to high temperatures. This is achieved by taking advantage of the high electro-optic (EO) activities (in-device n3r33 = 1021 pm V−1), low dielectric constant, low propagation loss (α, 0.22 dB mm−1), and ultra-high glass transition temperature (Tg, 172 °C) of the developed side-chain EO polymers. The presented modulator simultaneously fulfils the requirements of bandwidth, EO efficiency, and thermal stability for EO modulators. It could provide ultra-fast and reliable interconnects for energy-hungry and harsh-environment applications such as datacentres, 5G/B5G, autonomous driving, and aviation systems, effectively addressing the energy consumption issue for the next-generation optical communication.

show abstract

“…Further reductions in the CpB for next generation high-end optical interfaces will have to come in large part from higher symbol rates [7], [11]. This maximizes the throughput over the fiber and considerably reduces the amount of cards in the network, thus simplifying its management [12].…”

Section: Introductionmentioning

confidence: 99%

Point-to-Multipoint Optical Networks Using Coherent Digital Subcarriers

Welch

Napoli²,

Bäck³

et al. 2021

J. Lightwave Technol.

128

View full text Add to dashboard Cite

A paradigm shift in optical communication networks is proposed, with the introduction of a new ecosystem of devices and components with the capability of transforming current point-to-point optical networks (with their entailed, limiting, electrical aggregation) into flexible, scalable and cost-effective pointto-multipoint networks. In the new architecture, which better aligns with the hub-and-spoke traffic patterns observed in today's metro and access network segments, interoperability across a variety of transceivers operating at different speeds is achieved using individually routed, digitally generated subcarriers. The first comprehensive demonstration of the technical feasibility of the proposed point-to-multipoint architecture based on digital subcarrier multiplexing is presented, along with the remarkable cost savings and simplification of the network it enables.

show abstract

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Cited by 52 publications

References 43 publications

A monolithic bipolar CMOS electronic–plasmonic high-speed transmitter

A monolithic bipolar CMOS electronic–plasmonic high-speed transmitter

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

Point-to-Multipoint Optical Networks Using Coherent Digital Subcarriers

Contact Info

Product

Resources

About