All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends

Khan, Mohd Adnan; Bhansali, Unnat S.; Cha, Dongkyu; Alshareef, Husam N.

doi:10.1002/adfm.201202724

Cited by 77 publications

(40 citation statements)

References 19 publications

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“…High surface roughness leads to non-uniform electrical fi eld across the active layer and possibly poor yield and reproducibility for ferroelectric capacitors and low mobility and low ON/OFF ratios in ferroelectric transistors. [ 2,19,20 ] The measured surface roughness from the topography images (see the Supporting Information) of these blend fi lms annealed at 135 °C for 4 h, show relatively smooth fi lms with an increase in roughness from ∼ 2 nm for pure P(VDF-TrFE) fi lms to ∼ 5 nm for a blend fi lm with 8 wt% PPO. As seen from Figure 2 d, with increasing amounts of PPO the peak height of the amorphous PPO nanospheres increases hence leading to increase in roughness.…”

Section: Morphologymentioning

confidence: 97%

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Khan

Bhansali

Almadhoun

et al. 2013

Adv Funct Materials

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High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fl uoride-trifl uoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend fi lms spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend fi lms are spin cast with extremely low roughness (R rms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 10 6 cycles at 1 KHz) and high dielectric breakdown fi elds (≈360 MV/m).

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Section: Morphologymentioning

confidence: 97%

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Khan

Bhansali

Almadhoun

et al. 2013

Adv Funct Materials

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“…Memory diodes have been reported that were based on phase separated blends of P(VDF-TrFE) and organic semiconducting polymers. [23][24][25][26] The structure of these blends consists of semiconducting columns in a ferroelectric matrix. The bi-stable polarization state of the ferroelectric yields the binary information that can non-destructively be read out by current through the semiconducting columns.…”

Section: Introductionmentioning

confidence: 99%

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Lenz

Zhao

Richardson

et al. 2015

Physica Status Solidi (a)

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Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non-volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDF-TrFE)) interdigitated with the electrically insulating polymer polyvinyl alcohol (PVA). Micrometer size line gratings of both polymers were fabricated over large area by solution micromolding, a soft lithography method. The binary linear arrays were realized by backfilling with the second polymer. We investigated in detail the device physics. The electrical equivalent circuit is a linear capacitor of PVA in parallel with a ferroelectric capacitor of P(VDFTrFE). The binary arrays are electrically characterized by both conventional Sawyer-Tower and shunt measurements. The dependence of the remanent polarization on the array topography is explained by numerical simulation of the electric field distribution.

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“…A similar morphology was observed when P(VDF-TrFE) was mixed with other polymeric semiconductors such as poly(9,9'-dioctyl fluorene) (PFO) [ 10 ] and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt- [11] as well as molecular semiconductors such as [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). [12] It has been shown that liquid phase de-mixing of the blend components occurs via surface-directed spinodal decomposition during solution casting. [13] Surface tension differences determine to what extent one of the phases is preferred at an interface, and thus whether surface-directed stratification plays a (dominant) role in establishing the final phase geometry.…”

Section: Introductionmentioning

confidence: 99%

Surface Directed Phase Separation of Semiconductor Ferroelectric Polymer Blends and their Use in Non‐Volatile Memories

Breemen

Żaba

Khikhlovskyi

et al. 2014

Adv Funct Materials

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The polymer phase separation of P(VDF‐TrFE):F8BT blends is studied in detail. Its morphology is key to the operation and performance of memory diodes. In this study, it is demonstrated that it is possible to direct the semiconducting domains of a phase‐separating mixture of P(VDF‐TrFE) and F8BT in a thin film into a highly ordered 2D lattice by means of surface directed phase separation. Numerical simulation of the surface‐controlled de‐mixing process provides insight in the ability of the substrate pattern to direct the phase separation, and hence the regularity of the domain pattern in the final dry blend layer. By optimizing the ratio of the blend components, the number of electrically active semiconductor domains is maximized. Pattern replication on a cm‐scale is achieved, and improved functional device performance is demonstrated in the form of a 10‐fold increase of the ON‐current and a sixfold increase in current modulation. This approach therefore provides a simple and scalable means to higher density integration, the ultimate target being a single semiconducting domain per memory cell.

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All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends

Cited by 77 publications

References 19 publications

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

Microstructured organic ferroelectric thin film capacitors by solution micromolding

Surface Directed Phase Separation of Semiconductor Ferroelectric Polymer Blends and their Use in Non‐Volatile Memories

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