All-Solution-Processed Carbon Nanotube Floating Gate Memories

Lee, Yong-Woo; Yoon, Jinsu; Jeon, Junhyub; Lee, Hanbin; Ko, Jeonghee; Bae, Jong-Ho; Kim, Dae Hwan; Kim, Dong Myong; Choi, Sung-Jin

doi:10.1021/acsanm.2c00851

Cited by 3 publications

(3 citation statements)

References 30 publications

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“…Electrical devices composed of carbon nanotubes, like switches, electron field emitters, field-effect transistors and sensors, have been developed steadily over the years [122][123][124]. There were many studies of CNTFETs displaying memory characteristics [125][126][127][128][129][130][131] following the initial presentation of a CNT electromechanical memory [132]. Although, its stability of the charge storage is at most 14 days, hence it opens room for enhancement, but has an excellent mobility.…”

Section: High Speed Memorymentioning

confidence: 99%

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

et al. 2023

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The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed.

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Section: High Speed Memorymentioning

confidence: 99%

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

et al. 2023

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“…Emerging material-based floating-gate transistors, such as organic semiconductors, − metal oxides, , carbon nanotubes, , perovskites, , and two-dimensional materials, − have been developed widely in recent years. Rather than using conventional silicon MOSFETs, the use of these materials as an active layer or a floating-gate provides new functionalities, including mechanically flexible properties, , synaptic behaviors, − and logic-in-memory operation. , With this viewpoint, a photo-activated floating-gate memory device was proposed. − In these devices, photodetection and memory functions are combined in a single device, where the unnecessary signal delay can be alleviated, and the function of two different elements can be performed simultaneously so that the image recognition system can be miniaturized by reducing the metal wiring between the photodetector and the memory element.…”

Section: Introductionmentioning

confidence: 99%

“…Emerging material-based floating-gate transistors, such as organic semiconductors, 9−12 metal oxides, 13,14 carbon nanotubes, 15,16 perovskites, 17,18 and two-dimensional materials, 19−21 have been developed widely in recent years. Rather than using conventional silicon MOSFETs, the use of these materials as an active layer or a floating-gate provides new functionalities, including mechanically flexible properties, 22,23 synaptic behaviors, 24−27 and logic-in-memory operation.…”

Section: ■ Introductionmentioning

confidence: 99%

Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures

2023

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A photo memory is a device capable of modulating the state of the memory by light without a separate photodetector. As a result, as two functions can be performed with a single device, the photo memory enables the miniaturization of the image detection system and can be free from the signal delay issue that occurs between different devices through the reduction of the metal routing length. Along this line, we demonstrate an organic photo-memory transistor (PMT) with a small-molecule fluoropolymer-small-molecule-stacked floating-gate heterostructure. The proposed PMT consists of N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide, which has photoresponsive properties to visible light as a floating-gate and 2,7-dioctyl [1]benzothieno [3,2-b] [1]benzothiophene as a channel layer. The proposed PMT device can be erased under light illumination and exhibits a large memory window of approximately 32 V, and the read current (I Read ) shows stable retention characteristics in the programmed and erased states. The erasing operation can be performed under four different wavelengths of light, and multi-level storage is formed according to the light intensity. Furthermore, the PMT device operates the memory only with light without bias because of the photovoltaic effect. Text image mapping depends on whether or not the device is illuminated.

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From materials to applications: a review of research on artificial olfactory memory

Guo,

Han,

et al. 2025

Mater. Horiz.

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All-Solution-Processed Carbon Nanotube Floating Gate Memories

Cited by 3 publications

References 30 publications

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures

From materials to applications: a review of research on artificial olfactory memory

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