2023
DOI: 10.1021/acs.chemmater.3c00243
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Alleviating Defect and Oxidation in Tin Perovskite Solar Cells Using a Bidentate Ligand

Abstract: Tin-perovskite solar cells (Sn-PSCs) have low energy conversion efficiency and stability due to facile oxidation of Sn 2+ during precursor solution preparation and film growth. Herein, we introduced formohydrazide (FHZ) as a bidentate ligand into the Sn-halide perovskite (Sn-HaP) to improve the optoelectronic properties. This approach is found to be effective for the suppression of Sn-oxidation and interfacial energy band modulation. The depth profile distribution confirmed that the FHZ additive is primarily l… Show more

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Cited by 14 publications
(4 citation statements)
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“…The V bi extracted for the FASnI 3 + SnF 2 , FASnI 3 + SnCl 2 , and FASnI 3 + SnBr 2 devices is 0.63, 0.54, and 0.47 V, respectively. The calculated N i of FASnI 3 + SnF 2 , FASnI 3 + SnCl 2 , and FASnI 3 + SnBr 2 devices is 9.05 × 10 15 , 1.38 × 10 16 , and 1.11 × 10 16 cm –3 , respectively, which are comparable to the literature values determined by capacitance and Hall measurements. ,, The lower N i of FASnI 3 + SnF 2 relative to with SnCl 2 and SnBr 2 supports that the formation of Sn 4+ is most suppressed, leading to less background carriers (holes) and lower defect densities, which agrees with the UPS and XPS measurements. Dark J–V measurements (Figure S9) also support the decreased hole density, with decreased dark current densities for FASnI 3 + SnF 2 compared to those with other SnX 2 additives.…”
supporting
confidence: 77%
“…The V bi extracted for the FASnI 3 + SnF 2 , FASnI 3 + SnCl 2 , and FASnI 3 + SnBr 2 devices is 0.63, 0.54, and 0.47 V, respectively. The calculated N i of FASnI 3 + SnF 2 , FASnI 3 + SnCl 2 , and FASnI 3 + SnBr 2 devices is 9.05 × 10 15 , 1.38 × 10 16 , and 1.11 × 10 16 cm –3 , respectively, which are comparable to the literature values determined by capacitance and Hall measurements. ,, The lower N i of FASnI 3 + SnF 2 relative to with SnCl 2 and SnBr 2 supports that the formation of Sn 4+ is most suppressed, leading to less background carriers (holes) and lower defect densities, which agrees with the UPS and XPS measurements. Dark J–V measurements (Figure S9) also support the decreased hole density, with decreased dark current densities for FASnI 3 + SnF 2 compared to those with other SnX 2 additives.…”
supporting
confidence: 77%
“…S7a,† the PHPA molecule not only contains a strongly reducing hydrazide group that inhibits the oxidation of Sn 2+ , but also carries a sulfonic acid group (–SO 3 H) that may interact with Sn 2+ in solution via coordination interactions and electrostatic attraction, a similar mechanism of what is found in the literature with the exploitation of bidentate ligands. 34–36 This might happen because the PHPA molecule shows a zwitterionic behavior (see Fig. S7b†) which in polar organic solvents like DMSO and DMF (where PHPA has good solubility) can be maintained during film processing, as already reported elsewhere.…”
Section: Resultsmentioning
confidence: 54%
“…To explore the spatial distributions of molecular passivator, time-of-flight secondary ion mass spectrometry (ToF-SIMS) 32 , 45 , 59 was used to track the ionic distribution of PEDA 2+ and PZD 2+ in the HP. The characteristic ionic species are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%