Alleviating the Responsivity-Speed Dilemma of Photodetectors via Opposite Photogating Engineering with an Auxiliary Light Source beyond the Chip

Zou, Yanni; Zeng, Yan; Tan, Pengju; Zhao, Xiaolong; Zhou, Xuanze; Hou, Xiaohu; Ding, Mengfan; Yu, Shunjie; Huang, Hong; He, Qiming; Ma, Xiaolan; Xu, Guangwei; Hu, Qin; Long, Shibing

doi:10.1109/iedm45625.2022.10019389

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…The photoresponse performance of the 1D vdW Nb 2 Pd 1– x Se 5 photodetectors is further evaluated by several vital parameters, , including responsivity ( R ), detectivity ( D *), external quantum efficiency (EQE), and rising/decay time, which have been presented in detail in Note S1 in the Supporting Information. Figure (e) presents the calculated R and D * under a 638 nm laser with different power densities at a gate voltage of 40 V. A maximum R of ∼1 A/W is achieved at a gate voltage of 40 V because the photogating-effect-dominated photocurrent generation mechanism could extend the lifetime of photoexcited carriers .…”

Section: Resultsmentioning

confidence: 99%

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Gan,

Liu,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW Nb 2 Pd 1−x Se 5 (x = 0.29) nanowires. The 1D vdW Nb 2 Pd 1−x Se 5 photodetector exhibits a high mobility of ∼56 cm 2 /(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW Nb 2 Pd 1−x Se 5 photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.

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Section: Resultsmentioning

confidence: 99%

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Gan,

Liu,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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“…This miniaturization strategy provides an ideal, effective and simple strategy to ameliorate the RS dilemmas of PDs. [35][36][37] In addition to the superior performance, the micro-scale chip size of the micro-diode could further broaden potential applications, such as high-resolution solar-blind lighting/imaging and optical communication technology, which will be presented later.…”

Section: Resultsmentioning

confidence: 99%

Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics

Yu,

Memon,

Wang

et al. 2024

Advanced Optical Materials

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The progressive downscaling of silicon‐based microelectronic devices delivers compact and advanced integrated circuits for fast data processing and computing. Similarly, the miniaturization of conventional optoelectronics is also an important frontier of technology for emerging lighting, imaging, communication, and sensing. Herein, this study reports a miniature dual‐functional diode (DF‐diode) with both light‐emitting and light‐detecting functionalities. The proposed micro‐scale DF‐diode exhibits a record high responsivity of 300 mA W−1 at 265 nm with an ultrafast response rise time of 3.7 ns in light‐detecting mode. While operating in emitting mode, it demonstrates an extraordinarily high −3 dB optical bandwidth above 585 MHz with an enhanced external quantum efficiency performance. Significantly, the development of micro‐scale DF‐diodes has opened up a new avenue toward the realization of an effective and long‐distance solar‐blind optical communication system in the future.

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Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection

Hou,

Liu,

Bai

et al. 2024

Advanced Materials

Self Cite

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Detecting high‐energy photons from the deep ultraviolet (DUV) to X‐rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting high‐energy photons. However, the implementation of highly sensitive and high‐speed detectors based on WBG semiconductors has been a huge challenge due to the inevitable deep level traps and the lack of appropriate device structure engineering. Here, a sensitive and fast pyroelectric photoconductive diode (PPD), which couples the interface pyroelectric effect with the photoconductive effect based on tailored polycrystal Ga‐rich GaOx (PGR‐GaOX) Schottky photodiode, was first proposed. The PPD device exhibits ultra‐high detection performance for deep‐DUV and X‐ray light. The responsivity for DUV light and sensitivity for X‐ray are up to 104 A/W and 105 μC⋅Gyair−1/cm2, respectively. Especially, the interface pyroelectric effect induced by polar symmetry in the depletion region of the PGR‐GaOX can significantly improve the response speed of the device by 105 times. Furthermore, the potential of the device has been demonstrated for imaging enhancement systems with low power consumption and high sensitivity. This work fully excavates the potential of the pyroelectric effect for detectors and provides a novel design strategy to achieve sensitive and high‐speed detectors.This article is protected by copyright. All rights reserved

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Alleviating the Responsivity-Speed Dilemma of Photodetectors via Opposite Photogating Engineering with an Auxiliary Light Source beyond the Chip

Cited by 7 publications

References 22 publications

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics

Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection

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