Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies

Fang, Yin; Jiang, Yuanwen; Cherukara, Mathew J.; Shi, Fengyuan; Koehler, Kelliann; Freyermuth, George; Isheim, Dieter; Narayanan, Badri; Nicholls, A.; Seidman, David N.; Sankaranarayanan, Subramanian K. R. S.; Tian, Bozhi

doi:10.1038/s41467-017-02025-x

Cited by 22 publications

(20 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The diffusion of metals into Si substrates and the reverse diffusion of Si into metal is fast even at modest temperatures . Molecular dynamics simulations of the MACE process show that the high electronegativity of Au permits catalytic Au atoms to draw electrons from nearby Si atoms, creating active etching sites in the Si for electron‐rich oxidizing agents . Increased diffusion at the metal–Si interface may facilitate enhanced Si etching by increasing the overall mobility of metal ions and their ability to modulate the electron density of Si.…”

Section: Resultsmentioning

confidence: 99%

“…[ 56 ] Molecular dynamics simulations of the MACE process show that the high electronegativity of Au permits catalytic Au atoms to draw electrons from nearby Si atoms, creating active etching sites in the Si for electron-rich oxidizing agents. [ 57 ] Increased diffusion at the metal–Si interface may facilitate enhanced Si etching by increasing the overall mobility of metal ions and their ability to modulate the electron density of Si. This contradicts the mechanism underpinning MACE, where the catalytic metals serve to extract electrons/inject holes and neither the Si nor metal noticeably enriches with diffused atoms.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Interfacial Contact is Required for Metal‐Assisted Plasma Etching of Silicon

Sun

Almquist

2018

Adv Materials Inter

View full text Add to dashboard Cite

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. The most common dry process is reactive ion etching which fabricates nanostructures through the selective removal of unmasked silicon. Generalized enhancements of etching have been reported with mask-enhanced etching with Al, Cr, Cu, and Ag masks, but there is a lack of reports exploring the ability of metallic films to catalytically enhance the local etching of silicon in plasmas. Here, metal-assisted plasma etching (MAPE) is performed using patterned nanometers-thick gold films to catalyze the etching of silicon in an SF6/O2 mixed plasma, selectively increasing the rate of etching by over 1000%. The catalytic enhancement of etching requires direct Si-metal interfacial contact, similar to metal-assisted chemical etching (MACE), but is different in terms of the etching mechanism. The mechanism of MAPE is explored by characterizing the degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Interfacial Contact is Required for Metal‐Assisted Plasma Etching of Silicon

Sun

Almquist

2018

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…2 Since then, many promising applications of NWs from different materials including semiconductors and metals have arisen. [3][4][5][6] Au has been widely used as a catalyst to grow Si NWs 7,8 or even to etch Si for mesostructures. 9 In the case of metal NWs such as Au; Ag and Cu, they have been widely used as transparent conductive materials for electrodes, for example, extensive research on the applications of Ag NWs for solar cells.…”

Section: Little Attention Was Paid Onmentioning

confidence: 99%

Hydrogen Plasma-Assisted Growth of Gold Nanowires

Gong

Zheng

et al. 2020

Crystal Growth & Design

Self Cite

View full text Add to dashboard Cite

Due to their innocuity, Au nanowires present an interesting field of applications in biology and, particularly, in cancer therapy. Since their morphology and distribution can greatly affect their performances, being able to control their mode of growth is important. Various elaboration techniques including "top-down" and "bottom-up" approaches have been developed. In this work, we propose an efficient maskless method to grow Au nanowires with the help of hydrogen plasma treatment of Au thin films. We have been able to grow Au nanowires by taking advantage of spinodal dewetting of an Au thin film and the supply of silicon radicals resulting from hydrogen plasma etching of amorphous silicon coating the walls of the reactor. A variety of techniques have been applied to study the microstructure and the optical properties of Au nanowires. A strong photothermal effect of Au nanowires has been demonstrated with the help of visible laser light. In order to study the nanowire growth, the transport of Au atoms is discussed and a growth mechanism is proposed.

show abstract

“…32 This ordered deposition results from dynamic spontaneous instability of the liquid alloy droplets, where droplet sidewall oscillations promote atomic Au deposition. They performed ab initio molecular dynamics simulations and unveiled, surprisingly, single atomic Au-catalyzed chemical etching of Si in a HF/H 2 O 2 mixture.…”

Section: Approaches For the Rational Design Of Semiconductor Nanostrumentioning

confidence: 99%

“…Copyright 2016 Macmillan Publishers Ltd. (D) A schematic diagram (left) and a TEM image (right) of a SiNW with massively parallel sidewall grooves. Adapted with permission from ref 32. Copyright 2017 The Authors.…”

Section: Figurementioning

confidence: 99%

Rational Design of Semiconductor Nanostructures for Functional Subcellular Interfaces

Parameswaran

Tian

2018

Acc. Chem. Res.

Self Cite

View full text Add to dashboard Cite

CONSPECTUS One of the fundamental questions guiding research in the biological sciences is how cellular systems process complex physical and environmental cues and communicate with each other across multiple length scales. Importantly, aberrant signal processing in these systems can lead to diseases that can have devastating impacts on human lives. Biophysical studies in the past several decades have demonstrated that cells can respond to not only biochemical cues but also mechanical and electrical ones. Thus, the development of new materials that can both sense and modulate all of these pathways is necessary. Semiconducting nanostructures are an emerging class of discovery platforms and tools that can push the limits of our ability to modulate and sense biological behaviors for both fundamental research and clinical applications. These materials are of particular interest for interfacing with cellular systems due to their matched dimension with subcellular components (e.g., cytoskeletal filaments), and easily tunable properties in the electrical, optical and mechanical regimes. Rational design via traditional or new approaches, such as nanocasting and mesoscale chemical lithography, can allow us to control micro- and nanoscale features in nanowires to achieve new biointerfaces. Both processes endogenous to the target cell and properties of the material surface dictate the character of these interfaces. In this Account, we focus on (1) approaches for the rational design of semiconducting nanowires that exhibit unique structures for biointerfaces, (2) recent fundamental discoveries that yield robust biointerfaces at the subcellular level, (3) intracellular electrical and mechanical sensing, and (4) modulation of cellular behaviors through material topography and remote physical stimuli. In the first section, we discuss new approaches for the synthetic control of micro- and nanoscale features of these materials. In the second section, we focus on achieving biointerfaces with these rationally designed materials either intra- or extracellularly. We last delve into the use of these materials in sensing mechanical forces and electrical signals in various cellular systems as well as in instructing cellular behaviors. Future research in this area may shift the paradigm in fundamental biophysical research and biomedical applications through (1) the design and synthesis of new semiconductor-based materials and devices that interact specifically with targeted cells, (2) the clarification of many developmental, physiological, and anatomical aspects of cellular communications, (3) an understanding of how signaling between cells regulates synaptic development (e.g., information like this would offer new insight into how the nervous system works and provide new targets for the treatment of neurological diseases), (4) and the creation of new cellular materials that have the potential to open up completely new areas of application, such as in hybrid information processing systems.

show abstract

Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies

Cited by 22 publications

References 56 publications

Interfacial Contact is Required for Metal‐Assisted Plasma Etching of Silicon

Interfacial Contact is Required for Metal‐Assisted Plasma Etching of Silicon

Hydrogen Plasma-Assisted Growth of Gold Nanowires

Rational Design of Semiconductor Nanostructures for Functional Subcellular Interfaces

Contact Info

Product

Resources

About