Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Xu, Chao; Guo, Xuyun; Zhang, Ning; Yan, Jianping; Chen, Jiewei; Yu, Wei; Qin, Jiaqian; Zhu, Ye; Li, Lain‐Jong; Chai, Yang

doi:10.1007/s12274-022-4188-7

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…[21] The limited experimental studies on contact engineering for 2D Te require further investigation to develop a fundamental understanding and enhance device performance.Because the intrinsic chain structure of Te prefers onedimensional (1D) growth behavior, it is still very difficult to grow ultrathin 2D Te samples. [7,16,17,22] It is quite necessary to develop a method to reduce the thickness of the Te channel for better electrostatic control. The reported dry-etching methods, including plasma treatment, [23] thermal annealing, [24] UV/ozone treatment, [25] and local laser thinning, [26,27] can achieve selective patterning and layer-by-layer thinning of typical 2D materials (e.g., TMDs and BP), but the high energy applied to the samples can easily damage the bottom layers, which results in defects or disorders in the 2D materials.…”

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confidence: 99%

Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

Lin

Wang

Chen

et al. 2022

Adv Elect Materials

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Two‐dimensional (2D) tellurene (Te) has shown its great potential in nanoelectronics for its high carrier mobility and air stability. However, the high‐resistance electrical contact and relatively thick Te channel hinder its ultimate scaling and device performance. Here, the transport property of Te field‐effect transistors using platinum (Pt) contact with high work function is studied, which facilitates the effective hole injection in the p‐type Te channel. The electrical contact to Te using the Y‐function method (YFM) and the transmission line method (TLM) is investigated. The Te transistors with Pt contact show a low contact resistance of 400 Ωµm, a short transfer length of 80 nm, and low specific contact resistivity of 3.2 × 10−7 Ωcm2, resulting from the low Schottky barrier height (SBH) of Pt/Te interface. The Pt electrode also can work as an efficient catalyst that allows reduction of the Te channel thickness with a controllable thinning process in water under white light illumination. This self‐aligned catalytic thinning process enables the construction of the transistors with a thin Te channel and thick Te contact with Pt metal electrodes, which provides a device configuration with both effective electrostatic control and low contact resistance.

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confidence: 99%

Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process

Lin

Wang

Chen

et al. 2022

Adv Elect Materials

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“…The band gap is ~ 1 eV 2 and 0.35 eV for its monolayer and bulk, respectively [10,12]. The bulk tellurium can be diversified fabricated into crystals through methods such as hydrothermal approach [10], chemical vapor deposition (CVD) [13], and physical vapor deposition (PVD) [14]. Tellurium has a wide range of potential applications such as field effect devices [10,15], infrared devices [16,17], photodetectors [16,18,19], piezoelectric devices [20,21].…”

Section: Introductionmentioning

confidence: 99%

The Electronic Properties Evolution of Tellurium Crystals with Plasma Irradiation Treatment

Bi,

Wu,

Shao

et al. 2024

Preprint

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Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium's electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice broken. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, a remarkable observation emerged: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes, but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.

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“…acquired aligned 2D Te on mica substrates by leveraging the minimum lattice mismatch between [110] direction of Te and [600] direction of mica. 27 Peng Y. et al. reported the growth of locally aligned Te nanobelts on 2D h-BN with mobility as high as 1370 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%