Alloyed (ZnS)_x(Cu₂SnS₃)_1−xand (CuInS₂)_x(Cu₂SnS₃)_1−xnanocrystals with arbitrary composition and broad tunable band gaps

Abstract

Cu(2)SnS(3) nanocrystals with metastable zincblende and wurtzite structures have been successfully synthesized for the first time. Alloyed (ZnS)(x)(Cu(2)SnS(3))(1-x) and (CuInS(2))(x)(Cu(2)SnS(3))(1-x) nanocrystals with arbitrary composition (0 ≤x≤ 1) and ultra-broad tunable band gaps (3.63 to 0.94 eV) were obtained.

Facile solvothermal way to synthesize CuIn 0.7 Ga 0.3 S 2 nanocrystals and their application in low-cost photovoltaic device

“…The observed binding energy of sulfur is 161.3 eV and 162.6 eV, which is assigned to S 2p with a valence of -2. It is well corresponded with the previous literature [19] . GIGSSe solar cells [12,16] .…”

“…The valence states of all the elements in the as-synthesized CIGS nanocrystals were characterized by X-Ray photoelectron spectroscopy (XPS) and the results were illustrated in Figure 5. The Cu 2p XPS shows two peaks at 931.3 eV and 951.1eV with a peak separation of 19.8eV, demonstrating that the valence state of Cu is +1; the In and Ga split into 3d5/2 (444.5 eV), 3d3/2 (452.1 eV) and 3d respectively, which indicates that the valence state of In and Ga in the CIGS nanocrystals possess the same valence state that is +3. The observed binding energy of sulfur is 161.3 eV and 162.6 eV, which is assigned to S 2p with a valence of -2.…”

Cu2SnSe3 and alloyed (ZnSe)x(Cu2SnSe3)1−x nanocrystals with a metastable zincblende and wurtzite structure

“…Recently, Cu 2 SnS 3 nanocrystals with a metastable zincblende and wurtzite structure have been reported by our group, which enabled the synthesis of homogeneously alloyed (ZnS) x (Cu 2 SnS 3 ) 1À x nanocrystals with arbitrary composition [29]. It is particularly noteworthy that the zincblende and wurtzite structures of Cu 2 SnS 3 are the same as those of ZnS.…”

Formation of Cu2SnS3 nanoparticles by sequential injection of tin and sulfur oleylamine solutions into Cu1.8S nanoparticle dispersion

“…The highest reported power conversion efficiency of these semiconductors is $20% [4,5]. CdTe contains toxic Cd [6,7], and Cu(In,Ga)Se 2 contains costly In and Ga [8], so much attention has been given to more abundant and lower toxicity materials for thin film solar cells. The I-IV-VI semiconductor Cu 2 SnS 3 meets this requirement, and is a promising light absorber for thin film solar cells, because of its suitable direct band gap (0.9 eV) and large absorption coefficient (410 4 cm À 1 in the visible region) [9,10].…”