Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Faghaninia, Alireza; Bhatt, Kunal Rajesh; Lo, Cynthia S.

doi:10.1039/c6cp01278g

Cited by 17 publications

(9 citation statements)

References 53 publications

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“…AMSET has proven reliable for the calculation of mobility and Seebeck coefficient of several other semiconductors, including ZnS (ref. 37), GaAs and InN (ref. 35), whose transport properties are also governed by a single conduction band, like BSO.…”

Section: Resultsmentioning

confidence: 99%

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

et al. 2017

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Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

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Section: Resultsmentioning

confidence: 99%

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

et al. 2017

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“…On the theory side, a number of first-principles studies of native defects and impurities-hereafter commonly referred to as defects-in zincblende (cubic) or wurtzite (hexagonal) ZnS have been reported; [3][4][5][6][7] however, only limited information on Cu-related defects is available, especially in the case of the zincblende phase. Moreover, some of these studies 3,6 are based on density-functional theory (DFT) within the local-density (LDA) or generalized gradient (GGA) approximation 8,9 and/or the DFT+U extension 10 where U is the on-site Coulomb correction; these methods are known to have limited predictive power, often due to their inability to reproduce the experimental band gap and thus the position of defect levels in the band gap region.…”

Section: Introductionmentioning

confidence: 99%

Defect energy levels and persistent luminescence in Cu-doped ZnS

Hoang¹,

Latouche²,

Jobic³

2019

Computational Materials Science

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“…The corresponding carrier concentration and mobility were 4.5 × 10 19 cm −3 and 46 cm 2 V −1 s −1 , respectively. Even though the current experimental values have not reached the ideal electron conductivity of ZnS:Al, as suggested by Faghaninia et al, the progress in developing ZnS‐based TCM is quite exciting. It can be envisioned that the electrical conductivity of Al‐doped ZnS will be further enhanced via fine tuning of dopant composition, deposition technique, annealing process, etc.…”

Section: Applicationsmentioning

confidence: 85%

“…ZnS, as an earth‐abundant, nontoxic and relatively inexpensive wide bandgap semiconductor, has shown great potentials as a high‐performance p‐type TCM. However, it remains quite a challenge to synthesize an excellent n‐type ZnS TCMs as the intrinsic Zn vacancies (hole defects), which are near the conduction band minimum, would compete with n‐type dopants as the thermodynamically stable defects …”

Section: Applicationsmentioning

confidence: 99%

“…Faghaninia et al employed hybrid density functional theory and AMSET (ab initio model for mobility and Seebeck coefficient using the Boltzmann transport equation) to analyze the physical stability, optical transparency, and electrical conductivity of ZnS with different cations (B, Al, Ga, and In) and anion dopants (F, Cl, Br, and I) . According to their calculations, Al‐doped ZnS (AZS) is the most promising n‐type ZnS TCM as it exhibits the highest dopant solubility, largest electronic bandgap, and highest electrical conductivity (up to ≈3830 S cm −1 ) at the optimal dopant level of 6.25%.…”

Section: Applicationsmentioning

confidence: 99%

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Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

Liu

Chen

et al. 2018

Adv Funct Materials

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ZnS, as one of the first semiconductors discovered and a rising material star, has embraced exciting breakthroughs in the past few years. To shed light on the design principles and engineering techniques of ZnS for improved/novel optoelectronic properties, the fundamental mechanisms and commonly employed strategies are proposed in this review. Recent progress on modifications of ZnS allows it to be extensively and effectively used in versatile applications, including transparent conductors, UV photodetectors, luminescent devices, and catalysis, which are clearly and comprehensively summarized in this work. Novel functional devices springing up from the newly developed ZnS-based materials are highlighted as well. This review not only provides a scientific insight into the advances of ZnS-based materials, but also touches on the future opportunities in this inspiring field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201802029. relatively high charge recombination rate and low charge transport process inhibit the optoelectronic properties of ZnS as a high-performance photodetector. As a window layer of optoelectronic devices, a lack of high electrical conductivity typically hinders the practical use of ZnS in solar cells, photodiodes, light-emitting devices, etc. As a photocatalyst, the transparency of ZnS becomes a drawback as it suffers from a poor utilization of sunlight.There is not a perfect material, but the potential of developing a material is beyond limitation. The past few years have witnessed extensive designing and engineering of ZnS to explore its potentials in specific applications. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This review summarizes the recent breakthroughs on ZnS-based materials as excellent candidates in optoelectronic devices, photocatalysis, and other novel functional devices. More importantly, it sheds light on the design principles and fundamental mechanisms of the improved performance of ZnS through strategies such as developing novel nanostructures, bandgap engineering, alloying with other materials, etc. To the best of our knowledge, it is the first comprehensive review on the design principles and material engineering of ZnS for novel/improved properties and intended applications. Briefly, current literature on a variety of ZnS-based structures was first summarized, ranging from 0D to 2D nanostructures. Then, the representative applications of ZnS-based materials are described, which are mainly consisted of four parts, as shown in Figure 1: transparent conductors, UV photodetectors, luminescent devices, and catalysis. Each part contains the latest design strategies of ZnS for the intended applications, fabrication techniques, representative examples, and the state-of-the-art devices. Finally, it outlines the challenges and opportunities in each field. In particular, we provide our perspectives on the future research directions of ZnS in energy and environment.

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Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Cited by 17 publications

References 53 publications

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

Defect energy levels and persistent luminescence in Cu-doped ZnS

Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis

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