AlN growth on sapphire substrate by ammonia MBE

Мансуров, В. Г.; Nikitin, Alexey Y.; Galitsyn, Yu. G.; Svitasheva, S. N.; Журавлев, К. С.; Osváth, Z.; Dobos, László; Horváth, Z.E.; Pécz, B.

doi:10.1016/j.jcrysgro.2006.11.006

Cited by 32 publications

(24 citation statements)

References 9 publications

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“…AlN films were grown on sapphire or Si substrates by metal organic chemical vapor deposition (MOCVD) [17] or MBE [18] at a temperature more than 800 1C. At high temperatures, a serious interfacial reaction was inevitable, which made it very difficult to fabricate pure cubic phase AlN films.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of cubic AlN films on SrTiO3(100) substrates by pulsed laser deposition

Zhu

Zhao

Luo

et al. 2008

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of cubic AlN films on SrTiO3(100) substrates by pulsed laser deposition

Zhu

Zhao

Luo

et al. 2008

Journal of Crystal Growth

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“…10 cm -2 [10] most of the QDs in the samples with high GaN coverage are dislocation free. PL spectra presented in Fig.1 evidence that the size distribution of QDs in the sample #417 is close to that in the sample #415.…”

Section: Discussionmentioning

confidence: 95%

Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

Журавлев

Aleksandrov

Holtz

2010

Phys. Status Solidi (c)

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We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular‐beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm‐2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous‐wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time‐independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The nitridation is intuitively understood by structural and chemical changes caused by nitrogen on a-Al 2 O 3 surfaces. Several experimental studies have reported that AlN layers are formed on a a-Al 2 O 3 (0001) surface by exposing ammonia (NH 3 ) [1,2], N-radical [3] or N 2 -plasma [4,5] in molecular beam epitaxy as well as in metal-organic vapor phase epitaxy (MOVPE) [6,7] and hydride vapor phase epitaxy [8]. In contrast to these findings, Uchida et al have found that amorphous AlN x O 1 À x layer is formed on a a-Al 2 O 3 (0001) surface by heating at 1050 1C in NH 3 ambient conditions in the MOVPE [9].…”

Section: Introductionmentioning

confidence: 99%