Epitaxial growth of cubic AlN films on SrTiO3(100) substrates by pulsed laser deposition

Composition-dependent structure of polycrystalline magnetron-sputtered V–Al–C–N hard coatings studied by XRD, XPS, XANES and EXAFS

“…(Saib & Bouarissa, 2005;Zhang et al, 2007;Wang et al, 2010). Experimental values deviate somewhat, since the metastable cubic AlN is often stabilized in strained thin films and multilayers (Setoyama et al, 1996;Kim et al, 2001;Zhu et al, 2008).…”

Laser technology for synthesis of AlN films: influence of the incident laser fluence on the films microstructure

“…Extensive research is still necessary to find out exactly how the crystallographic structure and degree of crystallinity of AlN films depend on the film preparation method and conditions. Vispute et al reported the synthesis of h-AlN with (0001) orientation [6], while Zhu et al obtained cubic AlN films [8]. Metastable c-AlN was found in films synthesized by nitrogen-ion-assisted pulsed laser deposition [7].…”

Controllable growth of dielectric/semiconductor integrated films

“…So the (111) plane is considered to be the lowest energy growth plane for STO deposited on c-plane GaN. A possible epitaxial relationship is (111) [1-10]STO//(0001) [11][12][13][14][15][16][17][18][19][20]GaN, which gives a lattice mismatch about 13%. The lattice mismatch is relatively larger than that epitaxial growth could be obtained [14] .…”

“…The whole deposition process was in situ monitored by RHEED. The RHEED patterns along GaN [11][12][13][14][15][16][17][18][19][20] and directions prior to STO deposition are shown in Figure 2(a) and 2(b). The diffraction patterns of GaN have clear bright streaks, indicating the GaN surface was smooth without any formation of amorphous layers.…”

“…RHEED patterns of the [1][2][3][4][5][6][7][8][9][10] of STO direction along GaN [11][12][13][14][15][16][17][18][19][20] were observed, and patterns along the of STO direction were observed along GaN direction, as shown in Figure 2(c) and 2(d), respectively. These results indicated that the in-plane epitaxial relationships were [1-10]STO// [11][12][13][14][15][16][17][18][19][20] GaN and STO // GaN. The STO surface was slightly rough indicated by the diffraction spots, suggesting an island growth mode.…”