AlN Material Constants Evaluation and SAW Properties on AlN/Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt;and AlN/Si

Tsubouchi, Kazuo; Sugai, K.; Mikoshiba, Nobuo

doi:10.1109/ultsym.1981.197646

Cited by 117 publications

(46 citation statements)

References 17 publications

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“…In the theoretical calculation, the AlN thin film is treated as a hexagonal crystal system, and the SiC substrate is treated as a cubic crystal system whose thickness is assumed to be infinite. The velocity calculations were performed under the hypothesis of lossless materials, assuming the single crystal AlN and 3C-SiC material constants available in the literature [16,17].…”

Section: Acoustic Wave Propagation In 3c-sic/c-alnmentioning

confidence: 99%

Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN

Caliendo

2016

Crystals

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Abstract:The anisotropic materials as the acoustic wave propagating medium introduce the dependence of the phase velocity on the wave propagation direction, as opposed to the isotropic counterparts; in addition, the profile of the particle displacement components can be quite different, depending on the crystal type and propagation direction. The propagation of surface and bulk acoustic waves (SAWs and BAWs) along the (001), (111) and (110) planes of cubic SiC crystals have been studied. For specific propagation directions in these planes, slight variations in the velocity of the elastic surface waves are found. It was observed that Rayleigh-type, generalized and pseudo-surface waves can propagate at specific directions, thus confirming how the anisotropic behavior of the bare SiC substrate modifies the existence and the field profile of the SAW that propagates at its free surface. Finally, the SAW propagation along AlN/SiC-based multilayered structures is studied for the three SiC planes, different AlN piezoelectric layer thicknesses and electrical boundary conditions.

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Section: Acoustic Wave Propagation In 3c-sic/c-alnmentioning

confidence: 99%

Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN

Caliendo

2016

Crystals

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“…Here we employ AlN to accomplish this, since it has superior material properties such as high acoustic velocity, ͱ E Y / , and low dielectric loss. 15 Among the principal challenges in its use for NEMS are obtaining nanometer-thick AlN films that retain excellent piezoelectric properties and devising efficient actuation and readout schemes. In this letter we demonstrate piezoelectric NEMS resonators actuated by 100-nm-thick AlN layers, and characterize their driven resonance response, noise spectra, and frequency tuning.…”

mentioning

confidence: 99%

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin

Matheny

Feng

et al. 2009

Applied Physics Letters

161

119

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We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride ͑AlN͒ layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ϳ80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d 31 = 2.4 pm/ V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.

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“…where [37] d Experimental results from [41] The stresses in the basal plane caused by the mismatch in the lattice constants can be calculated by: …”

Section: Piezoelectric Polarizationmentioning

confidence: 99%

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Ambacher

Eickhoff

Link

et al. 2003

phys. stat. sol. (c)

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Electronic transport in semiconductors that possess high internal spontaneous and piezoelectric polarization opens up a new field of pyroelectronics and pyrosensors. The pyroelectric character of group-III-nitrides with wurtzite crystal structure yields a novel degree of freedom in designing and tailoring devices for modern micro- and nanoelectronic applications. Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of ions, gases and polar liquids. We present a review of both theoretical and experimental studies of spontaneous and piezoelectric polarization present in AlGaN/GaN heterostructures as well as the electronic transport properties of polarization induced two-dimensional electron gases which are formed at the AlGaN/GaN interface due to the difference in the total polarization of two adjacent III-nitride layers. We demonstrate that the two-dimensional electron gases (2DEGs) achieved without modulation doping are very suitable as channel of high electron mobility transistors optimally suited for high power and high frequency applications (PART A) as well as for various kinds of sensors which can be operated in harsh environments (PART B)

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AlN Material Constants Evaluation and SAW Properties on AlN/Al<inf>2</inf>O<inf>3</inf>and AlN/Si

Cited by 117 publications

References 17 publications

Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN

Theoretical Analysis of SAW Propagation in 3C-SiC/c-AlN

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

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