AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

Николаев, А. Е.; Никитина, И.П.; Zubrilov, A. S.; Mynbaeva, M. G.; Melnik, Yu.; Dmitriev, V.

doi:10.1557/proc-595-f99w6.5

Cited by 18 publications

(22 citation statements)

References 2 publications

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“…Some manufacturers have been producing GaN wafers of 2-in diameter by separating thick HVPE layers from starting substrates [3][4][5]. However, investigations concerning HVPE of AlN have been limited [6,7]. This is primarily due to the generation of gaseous AlCl by the reaction between Al metal and HCl gas at the source zone.…”

Section: Introductionmentioning

confidence: 99%

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth

Kumagai

Yamane

Miyaji

et al. 2003

phys. stat. sol. (c)

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A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (Al) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 °C and is AlCl 3 when the temperature is below 790 °C. Since AlCl 3 is less reactive with quartz (SiO 2 ) than AlCl, HVPE of AlN is possible using AlCl 3 and NH 3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported.

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Section: Introductionmentioning

confidence: 99%

Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth

Kumagai

Yamane

Miyaji

et al. 2003

phys. stat. sol. (c)

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“…Then, the sample was subjected to chemical etching in a solution containing a mixture of nitric and hydrofluoric acids and water, 4:1:5, respectively. Such a mixture effectively removes silicon [8]. Etching occurred for 15 minutes at 20°C, after which the film has been completely separated from the substrate.…”

Section: Methodsmentioning

confidence: 99%

Separation of stress-free AlN/SiC thin films from Si substrate

Redkov

Осипов

Mukhin

et al. 2016

J. Phys.: Conf. Ser.

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Abstract. We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. IntroductionNowadays scientists are actively searching for new ways to obtain high quality semiconductor thin films and heterostructures, in particular, gallium nitride that is used in LEDs and other electronics [1,2] and aluminum nitride. For the growth of such films sapphire and SiC substrates are used mainly [3][4][5], less often silicon or other substrates, but all of these substrates has some disadvantages. Sapphire has very low thermal conductivity and is dielectric, so the additional conducting contacts should be added. SiC is more suitable, because its thermal conductivity is high and close to the conductivity of the copper. In addition, the lattice parameters of SiC and AlN/GaN are much closer to each other [6]. Since SiC substrates are already widely used in practice, it allows one to suggest, that the use of SiC as a substrate for the growth of AlN/GaN heterostructures looks very promising. Nevertheless, a significant drawback of using single-crystal SiC in the manufacturing of devices is the high price of SiC substrates of good quality and desired polytype. One of the promising types of substrates which solves these problems are substrates of nano-SiC/Si, grown by substitution of silicon atoms to carbon atoms [7] directly in the silicon substrate. In fact, the authors of that work for the first time in world practice implemented method of successive substitution of carbon atoms instead of native silicon atoms right inside the substrate without destroying its crystalline structure. The method resembles the "genetic synthesis" of protein structures in biology. The quality of SiC thin film obtained by this method are far superior than quality of films grown on silicon substrates by conventional methods. The method is simple and cheap, and the presence of pores beneath the surface of SiC allows to overcome the mechanical stresses resulting from the lattice mismatch. Thus the study of the method [7] is prospective for the development of thin film technology.

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“…Considerable efforts were directed to the development of templates (the foreign substrates with the deposited thin nitrides layers) (Gautier et al, 2008;Miskys et al, 2003) sometimes referred to as MOVPE-derived GaN substrates (Davis et al, 2002) and pseudo bulk or freestanding nitride substrates (Lee et al, 2004;Nikolaev et al, 2000;Weyers et al, 2008) obtained by separation of the thick nitride layers from the sacrificial substrate after the growth (by laser-assisted lift-off (LLO) (Lee et al, 2004;Paskova et al, 2004) or by etching, e.g, in aqua regia for GaAs substrates) or during the growth on sapphire substrates with patterned GaN seeds by spontaneous self-separation (Tomita et al, 2004). The quality of the epitaxial layers grown on the templates in comparison to those grown on the basis substrate is under discussion.…”

Section: Templates and Pseudo Bulk Substratesmentioning

confidence: 99%