“…Among all the tested devices, one can mention thick passivation SiO 2 -based structures using high velocity modes on lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ) (Kando et al, 2006), (Gachon et al 2010), yielding the definition of interface or isolated-wave-based devices but modes excited on compound substrates (Elmazria et al, 2009), for instance consisting of a piezoelectric layer (AlN, ZnO, single crystal LiNbO 3 or LiTaO 3 , etc.) deposited atop a high acoustic wave velocity material such as diamond-C, silicon carbide, sapphire, silicon, and so on (Higaki et al, 1997), (Iriarte et al, 2003), (Salut & al, 2010).…”