Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

Leone, A.; Trione, A.M.; Junga, F. A.

doi:10.1109/23.101185

Cited by 21 publications

(8 citation statements)

References 9 publications

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“…Previous attempts to modify the SMT characteristics of VO 2 thin films include proton irradiation, low-energy (few hundreds of eV) ion bombardment, and electron beam (MeV) irradiation. [7][8][9][10] In all of these cases, damage due to the displacement cascades is the dominant mechanism through which defects are generated in the a) films. 11 Furthermore, the nuclear stopping is not constant throughout the film thickness for these low-energy implants and, therefore, the effects are not uniform, which renders considerable ambiguity with respect to distribution of defects and their role in producing changes in properties of VO 2 .…”

Section: Introductionmentioning

confidence: 99%

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films

et al. 2011

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We report controlled modifications in the semiconductor-to-metal transition characteristics of VO 2 single-crystal thin films induced by swift heavy ion (SHI) irradiation with varying ion fluences. At very high energies of ions (200 MeV Au), the electronic stopping (;2009 eV/Å) dominates over nuclear stopping (;16 eV/Å). Under these extreme electronic excitation conditions caused by electronic stopping and the passage of SHIs through the entire thickness of the film, creation of certain unique type of defects and disordered regions occurs. X-ray diffraction, Raman spectroscopy, infrared transmission spectroscopy, x-ray photoelectron spectroscopy (XPS), and electrical measurements were performed to investigate the characteristics and role of these defects on structural, optical, and electrical properties of VO 2 thin films. XPS and electrical resistivity measurements suggest that the ion irradiation induces localized defect states that appear to correlate well with the creation of disordered regions in the VO 2 thin films. The high-energy heavy-ion irradiation changes the transition characteristics drastically from a first-order to a second-order transition (electronic-Mott type). The low-temperature conductance data for these ion-irradiated films fit well with the quasiamorphous model for resistivity of VO 2 , where ion irradiation is believed to create mid-bandgap defect states.

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Section: Introductionmentioning

confidence: 99%

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films

et al. 2011

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“…Among them, VO 2 is the most interesting because its transition temperature is close to room temperature, ~68ºC [1], and therefore is being under many studies in an effort to apply it in smart energy efficient windows with active solar control [8][9][10][11][12]. The stoichiometry of VO 2 has been reported as a determinant factor for an improved thermochromic performance [13][14][15]. However, stoichiometric VO 2 is difficult to deposit because of a narrow stability range resulting from the complex vanadium-oxygen reactive system [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, The magnitude of the change and the respective hysteresis depend on the properties of the film, i.e. crystallinity, grain size, impurities and adherence, as a consequence of the processing conditions [14,15,19].…”

Section: Introductionmentioning

confidence: 99%

Structural and Morphological Characterization of Magnetron Sputtered Nanocrystalline Vanadium Oxide Films for Thermochromic Smart Surfaces

Batista

Teixeira

Carneiro

2008

JNanoR

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Nanocrystalline vanadium oxide thin films have been deposited by reactive DC magnetron sputtering onto glass substrates under different processing conditions. Structural analysis and phase identification have been carried out by means of X-ray diffractometry (XRD). The surface morphologies of the different films have been examined by both scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD results revealed single and multiple phase oxides such as VO 2 (B), VO 2 (M), V 2 O 5 , etc. with considerable differences concerning to surface morphologies, as observed by SEM and AFM. The effects the O 2 /Ar flow ratio, DC current, and working pressure on the phases formed and growth rates is discussed. Moreover, VO 2 (M) films exhibited different morphologies concerning to grain size and shape as well as dissimilar preference in crystal orientation, as a result of the processing conditions. The optical/thermochromic response of the VO 2 (M) specimens deposited under different growth rate conditions was evaluated by optical spectrophotometry and related to the respective structural characteristics.

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“…This film was converted in to VO 2 phase by reduction at temperature above 400°C by vacuum heating in a proper condition [14]. Proton irradiation [15] can also changes the properties of the VO 2 and V 2 O 3 thin films. It was reported that vanadium or oxygen vacancies were responsible for the observed changes in the films.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ion Irradiation on Vanadium Oxide Thin Films Deposited by Reactive RF Sputtering Technique

Gupta¹,

Kumar²,

Singhal³

2019

IJRTE

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Vanadium has many oxides (VO 2 , V 2 O 3 , V 2 O 4 , V 6 O 13 and V 2 O 5 ) due to high oxidation state. Properties of the vanadium oxide thin films can be changed by pressure, doping and strain. Ion irradiation can transform the phase, mix the two solid materials, form epitaxial crystallization and create nanostructure etc. in the materials. Purpose of our study was to observe the effect of swift heavy ions (SHIs) irradiation on vanadium oxide thin films. Thin films of vanadium oxide were deposited on the Si substrate by reactive RF sputtering technique. As-deposited thin films were irradiated by swift heavy ions (100 MeV Ag ions) at different fluences at room temperature. The effect of ions irradiation was studied by using grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR) and UV-vis-NIR spectrophotometer characterization techniques. GIXRD pattern revealed that swift heavy ions can induce the phase transformation (V 6 O 13 to V 2 O 3 ) in the films. FTIR characterization showed that δ(V=O) stretching mode at 1020 cm -1 shifted to the lower wave number side. Optical properties showed blue shift in the absorption spectra at the higher fluences. These shifting are due to the lowering of vanadium's oxidation state in the thin films. This change in oxidation state of vanadium transforms the phase of the films. Irradiation with SHIs can transform the phase along with enhancement in the crystallinity of the vanadium oxide films.

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Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

Cited by 21 publications

References 9 publications

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films

Structural and Morphological Characterization of Magnetron Sputtered Nanocrystalline Vanadium Oxide Films for Thermochromic Smart Surfaces

Effect of Ion Irradiation on Vanadium Oxide Thin Films Deposited by Reactive RF Sputtering Technique

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Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

Cited by 21 publications

References 9 publications

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO2 thin films

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO2 thin films

Structural and Morphological Characterization of Magnetron Sputtered Nanocrystalline Vanadium Oxide Films for Thermochromic Smart Surfaces

Effect of Ion Irradiation on Vanadium Oxide Thin Films Deposited by Reactive RF Sputtering Technique

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Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films

Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO₂ thin films