Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation

Hong, Hawoong; Wei, C. M.; Chou, M. Y.; Wu, Zhimeng; Basile, Leonardo; Chen, Haydn; Holt, Martin V.; Chiang, T.‐C.

doi:10.1103/physrevlett.90.076104

Cited by 90 publications

(71 citation statements)

References 17 publications

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“…2(a), which shows the film thickness dependence of intraband contribution to the dielectric function as defined in equation (4). First, there is a very fast decay of plasma frequency from 14.3 eV to 10.5 eV going from the 1 ML to 3 ML film.…”

Section: Resultsmentioning

confidence: 99%

Quantum size effect on dielectric function of ultrathin metal film: a first-principles study of Al(1 1 1)

Ming¹,

Blair²,

Liu³

2014

J. Phys.: Condens. Matter

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Quantum manifestations of various properties of metallic thin films by quantum size effect (QSE) have been studied intensively. Here, using first-principles calculations, we show quantum manifestation in dielectric properties of Al (111) ultrathin films. The QSE on the dielectric function is revealed, which arises from size dependent contributions from both intraband and interband electronic transitions. More importantly, the in-plane interband transitions in the films thinner than 15 monolayers are found to be smaller than the bulk counterpart in the energy range from 1.5 eV to 2.5 eV. This indicates less energy loss with plasmonic material of Al in the form of ultrathin film. Our findings may shed light on searching for low-loss plasmonic materials via quantum size effect.

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Section: Resultsmentioning

confidence: 99%

Quantum size effect on dielectric function of ultrathin metal film: a first-principles study of Al(1 1 1)

Ming¹,

Blair²,

Liu³

2014

J. Phys.: Condens. Matter

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“…46) With this method, atomically flat Pb films in macroscopic scale could be prepared on several semiconductor substrates, whose stabilities depended strongly on the film thickness. [46][47][48][49][50][51][52] An ''electronic growth'' model was proposed to account for the intriguing growth behavior, where the QSE dominates in the magic stability of thin films. 53,54) The upper panel in Fig.…”

Section: Double-layer Growth Behaviors Of Pb Filmsmentioning

confidence: 99%

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

Jia

Zhang

et al. 2007

J. Phys. Soc. Jpn.

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Atomically flat metal ultrathin films grown on semiconductor substrates form a quasi-two-dimensional (2D) electronic system, which offers a great opportunity to explore novel properties induced by quantum size effects (QSE). In such a system, the motion of electrons in the film plane is essentially free, however, in the film normal direction it is confined, which leads to the quantized electronic states, i.e., quantum well states (QWS). The formation of QWS induces the redistribution of electrons and changes the electronic structure of the metal films and thus modifies their properties. By controlling the film thickness-the width of the confinement potential well, the QWS, together with the physical and chemical properties of the films can be engineered. In this article, we will summarize our recent studies on this problem in the Pb/Si(111) system, and discuss the perspectives in this area.

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“…Quantum-well ͑QW͒ states in nanometer thick metal films have been associated with a number of interesting properties, such as magic layer numbers in thin-film growth, [1][2][3] oscillatory magnetic interlayer coupling in magnetic multilayers, [4][5][6] work-function modulations, 7 and periodic anomalies in thinfilm conductance. 8 Electron confinement in thin films can be achieved by an appropriate choice of a substrate which reflects electronic states.…”

Section: Introductionmentioning

confidence: 99%

Quantum-size effects in ultrathin Mg films

Binggeli

Altarelli

2008

Phys. Rev. B

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Recent experiments on the oxidation of ultrathin Mg films have revealed the existence of a correlation between surface reactivity and quantum-size effects. Using ab initio density-functional calculations, we have investigated the electronic properties of epitaxial Mg͑0001͒ films, 5-17 atomic-layer thick, on a W͑110͒ substrate to clarify the origin of this correlation. We find that the decay length in vacuum of the thin-film local density of states at the Fermi energy exhibits a pronounced oscillatory behavior as a function of film thickness. This is expected to have a major impact on the electron transfer rate by resonant tunneling, which is believed to control the initial sticking of O 2 molecules in the oxidation process. We have also examined the atomic-scale properties of the surface, interface, and quantum-well states of the Mg͑0001͒ films on tungsten and the influence of epitaxial strain on the electronic states, in connection with the interpretation of recent photoemission spectra on these systems. In particular, we find strongly coupled surface-interface resonant states that originate from the Shockley surface states of the films. Comparison with photoemission measurements allows an unambiguous identification of the corresponding surface-interface-state splitting.

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Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation

Cited by 90 publications

References 17 publications

Quantum size effect on dielectric function of ultrathin metal film: a first-principles study of Al(1 1 1)

Quantum size effect on dielectric function of ultrathin metal film: a first-principles study of Al(1 1 1)

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

Quantum-size effects in ultrathin Mg films

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