Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

Cheng, Wen‐Hao; Chakravorty, K. K.; Farnsworth, Jeff N.

doi:10.1117/12.504391

Cited by 4 publications

(4 citation statements)

References 17 publications

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“…As mask design rules move toward the subwavelength regime, mask topographical effects on imaging performance become more significant even for thin-absorber masks [3]. Below, the case of a 59 nm thin Cr binary mask is studied with various Cr side wall angles (SWA).…”

Section: Swa_meef: Side Wall Angle Induced Mask Error Enhancement Factormentioning

confidence: 99%

Vectorial effects in subwavelength mask imaging

et al. 2005

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Ultra high numerical aperture (NA) enables extension of ArF lithography for the 45 technology node and beyond. The resulting changes in design rules drives feature sizes on the mask into the sub-wavelength regime. As 2-beam imaging techniques (off-axis illumination and alternating phase shift mask) are required for strong resolution enhancement in low-k1 lithography, traditional scalar and paraxial approximations used for optical image modeling are no longer valid in the ultra high NA regime. Vector and thick-mask based models are required to account for topographic effects and large angles of incident light at the reticle plane in ultra-high NA systems. Although vector-based imaging theory is well understood, experimental validation is required to ensure the appropriate topographical and optical parameters are being used. To address these issues, finite-difference time-domain rigorous electromagnetic simulation are compared to experimental measurements of the polarization dependent diffraction efficiencies on advanced optical reticles. Based on these results, the impact of mask induced polarization to vectorial imaging latitude is assessed. The impact of polarization purity, mask absorber profile, and Fresnel effects through the pellicle on process window and OPC are also discussed.

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Section: Swa_meef: Side Wall Angle Induced Mask Error Enhancement Factormentioning

confidence: 99%

Vectorial effects in subwavelength mask imaging

et al. 2005

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“…This asymmetry in the intensity of transmitted light impacts the printed CD and gives rise to what is called Imbalance in the printed Image. The magnitude of this imbalance depends on the aperture width and increases significantly as the aperture width drops below a critical width [8]. Thus, with scaling down of the feature size …”

Section: Figurementioning

confidence: 98%

Alternating phase shift mask technology for 65nm logic applications

et al. 2006

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Alternating Phase Shift Mask (APSM) Technology has been developed and successfully implemented for the poly gate of 65nm node Logic application at Intel. This paper discusses the optimization of the mask design rules and fabrication process in order to enable high volume manufacturability.Intel's APSM technology is based on a dual sided trenched architecture. To meet the stringent OPC requirements associated with patterning of narrow gates required for the 65nm node, Chrome width between the Zero and Pi aperture need to be minimized. Additionally, APSM lithography has an inherently low MEEF that furthermore, drives a narrower Chrome line as compared to the Binary approach. The double sided trenched structure with narrow Chrome lines are mechanically vulnerable and prone to damage when exposed to conventional mask processing steps. Therefore, new processing approaches were developed to minimize the damage to the patterned mask features. For example, cleaning processes were optimized to minimize Chrome & quartz damage while retaining the cleaning effectiveness. In addition, mask design rules were developed which ensured manufacturability. The narrow Chrome regions between the zero and Pi apertures severely restrict the tolerance for the placement of the second level resists edges with respect to the first level. UV Laser Writer based resist patterning capability, capable of providing the required Overlay tolerance, was developed, An AIMS based methodology was used to optimize the undercut and minimize the aerial image CD difference between the Zero and Pi apertures.

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“…The development consists of the definition of a suitable light source, optics, and other hardware aspects of such a lithographic system, e.g. including mask technology, immersion liquid and defect analysis [22].…”

Section: Emerging Lithographic Technologies In Industrymentioning

confidence: 99%

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

Lüttge¹

2009

J. Phys. D: Appl. Phys.

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This topical review provides an overview of nanolithographic techniques for nanoarrays. Using patterning techniques such as lithography, normally we aim for a higher order architecture similarly to functional systems in nature. Inspired by the wealth of complexity in nature, these architectures are translated into technical devices, for example, found in integrated circuitry or other systems in which structural elements work as discrete building blocks in microdevices. Ordered artificial nanostructures (arrays of pillars, holes and wires) have shown particular properties and bring about the opportunity to modify and tune the device operation. Moreover, these nanostructures deliver new applications, for example, the nanoscale control of spin direction within a nanomagnet. Subsequently, we can look for applications where this unique property of the smallest manufactured element is repetitively used such as, for example with respect to spin, in nanopatterned magnetic media for data storage. These nanostructures are generally called nanoarrays. Most of these applications require massively parallel produced nanopatterns which can be directly realized by laser interference (areas up to 4 cm2 are easily achieved with a Lloyd's mirror set-up). In this topical review we will further highlight the application of laser interference as a tool for nanofabrication, its limitations and ultimate advantages towards a variety of devices including nanostructuring for photonic crystal devices, high resolution patterned media and surface modifications of medical implants. The unique properties of nanostructured surfaces have also found applications in biomedical nanoarrays used either for diagnostic or functional assays including catalytic reactions on chip. Bio-inspired templated nanoarrays will be presented in perspective to other massively parallel nanolithography techniques currently discussed in the scientific literature.

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Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond

Cited by 4 publications

References 17 publications

Vectorial effects in subwavelength mask imaging

Vectorial effects in subwavelength mask imaging

Alternating phase shift mask technology for 65nm logic applications

Massively parallel fabrication of repetitive nanostructures: nanolithography for nanoarrays

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