Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors

McKelvey, J. P.; Longini, R. L.; Brody, T. P.

doi:10.1103/physrev.123.51

Cited by 132 publications

(48 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar result has been obtained in Ref. [7] for nondegenerate conditions using McKelvey's flux model [8]. A further difference between the two models is that we keep distinct symbols for the device length L and the gate length L g .…”

Section: Mobility Modelsupporting

confidence: 82%

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

Gnani

Gnudi

Reggiani

et al. 2009

2009 International Conference on Simulation of Semiconductor Processes and Devices

View full text Add to dashboard Cite

Abstract-In this work we investigate the electron mobility in nanowire FETs operating under quasi-ballistic conditions. Starting from a general expression of the current-voltage characteristics worked out in a previous paper, we extract the drain current at vanishingly-low drain voltages and find the functional dependence of the effective mobility on the device length, the mean-free path and the barrier height. The resulting expression is nonlocal for short gate lengths, but may be useful for the interpretation of experimental measurements. The main result of this work is that the combined effect of acoustic-phonon and surface-roughness scattering leads to a nearly uniform mean-free path, at least for nanowire FETs with a diameter around 5 nm. Thus, mobility degradation at large gate voltages is predominantly due to carrier degeneracy, rather than an enhanced scattering rate.

show abstract

Section: Mobility Modelsupporting

confidence: 82%

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

Gnani

Gnudi

Reggiani

et al. 2009

2009 International Conference on Simulation of Semiconductor Processes and Devices

View full text Add to dashboard Cite

show abstract

“…(1). It is instructive to approach the MOSFET operation from the TOB point of view and consider the fluxes present at the barrier (McKelvey's flux method): 29,32,33 the current (equivalently, the flux) moving in the positive direction (from source to drain) I + is equal to the thermionically emitted current from the source, I + = I + b . The current in the negative direction is comprised of the thermionically emitted current from the drain and the portion of I + backscattered due to collisions in the channel:…”

Section: -7mentioning

confidence: 99%

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

2015

View full text Add to dashboard Cite

Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

show abstract

“…In many cases of physical relevance, however, the mean free path is neither large nor small compared with the characteristic dimensions of the sample. Thus, formulas for the current-voltage characteristic have appeared in the literature which combine features of the two limiting types of transport mechanism for particular conduction band edge profiles, e.g., for a single barrier [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Generalized Drude model: unification of ballistic and diffusive electron transport

Lipperheide

Weis

Wille

2001

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean free path and arbitrary shape of the conduction band edge profile. Universal formulas are obtained for the current-voltage characteristic in the nondegenerate case and for the zero-bias conductance in the degenerate case, which describe in a transparent manner the interplay of ballistic and diffusive transport. The semiclassical approach is adopted, but quantum corrections allowing for tunneling are included. Examples are considered, in particular the case of chains of grains in polycrystalline or microcrystalline semiconductors with grain size comparable to, or smaller than, the mean free path. Substantial deviations of the results of the unified model from those of the ballistic thermionic-emission model and of the drift-diffusion model are found. The formulation of the model is one-dimensional, but it is argued that its results should not differ substantially from those of a fully three-dimensional treatment. PACS number(s): 05.60.Cd,

show abstract

Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors

Cited by 132 publications

References 8 publications

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Generalized Drude model: unification of ballistic and diffusive electron transport

Contact Info

Product

Resources

About