Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

Yang, Gang; Li, Yong Feng; Ye, Bin; Ding, Zhanhui; Deng, Rui; Fang, Xuan; Wei, Zhipeng

doi:10.1021/acsami.5b04287

Cited by 23 publications

(7 citation statements)

References 39 publications

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“…Here, a 8 V reverse bias has not been found to have a detrimental irreversible junction breakdown effect as this result was reproducible when the photodetector was retested, which can be considered within the safe working range. This peak EQE value (in the order of 10 3 to 10 4% ) in the UV–vis region is much higher than those of previously reported CZTS photodetectors , and is comparable to those of other high quality photodetectors. − We conclude that this impressive increase with applied bias is due to the widening of the depleted region. As a result, the additional photoelectrons generated in the bulk TiO 2 are more easily separated and collected.…”

Section: Resultssupporting

confidence: 68%

New Insight into Sulfurized and Selenized Kesterite–Titania Nanostructures for CdS-free and HTM-free Photovoltaic and Voltage-Modulated Photodetecting Applications

Wang

Brodusch

Gauvin

et al. 2019

ACS Sustainable Chem. Eng.

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Cu2ZnSnS4 or kesterite and its selenium alloyed counterparts are considered promising for next generation photovoltaic applications due to their excellent optoelectronic properties and earth-abundant, nontoxic composition. In order to alleviate the adverse effects of defects and interfaces on charge separation and transport in current thin film kesterite photovoltaics, new solutions such as the application of an inverted superstrate configuration have been proposed. In this article, sulfurized and selenized kesterite were deposited by solution processing on thin ALD Al2O3 coated TiO2 nanorods to fabricate novel nanostructured devices free of additional buffer layers and hole transfer materials (HTM). The selenized kesterite (CZTSSe) solar cell demonstrated an energy conversion efficiency of 1.85% with high J sc of ∼20 mA/cm2 while the sulfurized kesterite (CZTS) device showed lower solar cell efficiency but excellent photodetecting properties under reverse bias with adjustable working window from visible-only to UV–vis–NIR range.

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Section: Resultssupporting

confidence: 68%

New Insight into Sulfurized and Selenized Kesterite–Titania Nanostructures for CdS-free and HTM-free Photovoltaic and Voltage-Modulated Photodetecting Applications

Wang

Brodusch

Gauvin

et al. 2019

ACS Sustainable Chem. Eng.

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“…Heterostructures of two dimensional layered materials and wide band gap semiconductors are of great importance for optoelectronic and nanoelectronic applications. [1][2][3][4][5][6][7] Among the wide band gap semiconductors, gallium nitride (GaN) is one of the most attractive nitride semiconductor for applications in light-emitting diodes (LEDs), solar cells, photodetectors, highelectron-mobility transistors, and high frequency power devices. [4,[6][7][8][9][10][11][12][13][14][15] Recently, significant interest has been given to fabricate graphene/GaN based Schottky junction considering the outstanding properties of both the materials.…”

Section: Introductionmentioning

confidence: 99%

“…Heterostructures of two dimensional layered materials and wide band gap semiconductors are of great importance for optoelectronic and nanoelectronic applications . Among the wide band gap semiconductors, gallium nitride (GaN) is one of the most attractive nitride semiconductor for applications in light‐emitting diodes (LEDs), solar cells, photodetectors, high‐electron‐mobility transistors, and high frequency power devices .…”

Section: Introductionmentioning

confidence: 99%

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

Kalita

Kobayashi

Shaarin

et al. 2018

Phys. Status Solidi A

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Metal‐insulator‐semiconductor (MIS) based Schottky barrier diode (SBD) has significant importance for optoelectronics and other device applications. Here, we demonstrate the fabrication of a highly rectifying Schottky barrier diode (SBD) using a thin hexagonal boron nitride (hBN) interfacial layer in graphene and n‐type gallium nitride (n‐GaN) heterojunction. Significant reduction of reverse saturation current is obtained with the introduction of hBN layer in graphene/n‐GaN interface. The MIS based SBD shows excellent ultraviolet (UV) photoresponsivity with a light/dark ratio of ≈105 at a low reverse bias voltage (−1.5V). Temperature dependent current density‐voltage (J–V) characteristics of the graphene/hBN/n‐GaN heterojunction is investigated to elucidate the current transport behavior. The Schottky barrier height increased with increase in temperature from 0.77 to 0.98 eV in the temperature range of 298–373 K, respectively. The series resistance (RS) is also found to be temperature dependent, where RS decreased with increase in temperature. The understanding of graphene/hBN/n‐GaN heterojunction device characteristics can be significant for photodiode and switching device applications.

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“…While heterointegration of Si with narrow band gap semiconductors has been conventionally performed via direct growth and wafer bonding methods, those methods have certain critical limitations. The direct growth method suffers from poor crystal quality and necessity for a thick buffer layer caused by lattice constant mismatch between Si and Ge or III–V semiconductors. − The wafer bonding technique, which requires high pressure and temperature conditions, often results in generation of defects, such as voids and cracks, at heterostructure interfaces. , Interface defects result in poor electrical or optical performances of final devices because they act as charge trap sites. ,, …”

Section: Introductionmentioning

confidence: 99%

“…24,26 Interface defects result in poor electrical or optical performances of final devices because they act as charge trap sites. 25,27,28 Recently, the epitaxial layer transfer technique has been suggested as an alternative strategy for heterogeneous integration. 29 One of the important advantages of this technique is the absence of interfacial defects in heterostructures caused by lattice mismatch or high temperature processes.…”

Section: ■ Introductionmentioning

confidence: 99%

InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity

Lee

Lim

et al. 2016

ACS Appl. Mater. Interfaces

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Development of broadband photodetectors is of great importance for applications in high-capacity optical communication, night vision, and biomedical imaging systems. While heterostructured photodetectors can expand light detection range, fabrication of heterostructures via epitaxial growth or wafer bonding still faces significant challenges because of problems such as lattice and thermal mismatches. Here, a transfer printing technique is used for the heterogeneous integration of InGaAs nanomembranes on silicon semiconductors and thus the formation of van der Waals heterojunction photodiodes, which can enhance the spectral response and photoresponsivity of Si photodiodes. Transfer-printed InGaAs nanomembrane/Si heterojunction photodiode exhibits a high rectification ratio (7.73 × 10 at ±3 V) and low leakage current (7.44 × 10 A/cm at -3 V) in a dark state. In particular, the photodiode shows high photoresponsivities (7.52 and 2.2 A W at a reverse bias of -3 V and zero bias, respectively) in the broadband spectral range (400-1250 nm) and fast rise-fall response times (13-16 ms), demonstrating broadband and fast photodetection capabilities. The suggested III-V/Si van der Waals heterostructures can be a robust platform for the fabrication of high-performance on-chip photodetectors compatible with Si integrated optical chips.

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Alternative Spectral Photoresponse in a p-Cu₂ZnSnS₄/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

Cited by 23 publications

References 39 publications

New Insight into Sulfurized and Selenized Kesterite–Titania Nanostructures for CdS-free and HTM-free Photovoltaic and Voltage-Modulated Photodetecting Applications

New Insight into Sulfurized and Selenized Kesterite–Titania Nanostructures for CdS-free and HTM-free Photovoltaic and Voltage-Modulated Photodetecting Applications

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity

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