InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity

Abstract

Development of broadband photodetectors is of great importance for applications in high-capacity optical communication, night vision, and biomedical imaging systems. While heterostructured photodetectors can expand light detection range, fabrication of heterostructures via epitaxial growth or wafer bonding still faces significant challenges because of problems such as lattice and thermal mismatches. Here, a transfer printing technique is used for the heterogeneous integration of InGaAs nanomembranes on silicon semiconductors and thus the formation of van der Waals heterojunction photodiodes, which can enhance the spectral response and photoresponsivity of Si photodiodes. Transfer-printed InGaAs nanomembrane/Si heterojunction photodiode exhibits a high rectification ratio (7.73 × 10 at ±3 V) and low leakage current (7.44 × 10 A/cm at -3 V) in a dark state. In particular, the photodiode shows high photoresponsivities (7.52 and 2.2 A W at a reverse bias of -3 V and zero bias, respectively) in the broadband spectral range (400-1250 nm) and fast rise-fall response times (13-16 ms), demonstrating broadband and fast photodetection capabilities. The suggested III-V/Si van der Waals heterostructures can be a robust platform for the fabrication of high-performance on-chip photodetectors compatible with Si integrated optical chips.

UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2

“…Molybdenum trioxide (MoO 3 , 99.99%) and sulfur (S, 99.5%) were used to synthesize high crystalline triangular MoS 2 flakes on sapphires through chemical vapor deposition (CVD) procedure [7]. As substrates, sapphires were well cleaned in acetone, alcohol, and deionized water with sonication for 10 min, respectively.…”

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

“…The large responsivity of the doped device was attributed to the compensated acceptor states of the Ge film introduced by dislocations. Ko et al produced a broadband photodetector based on a InGaAs/Si van der Waals heterojunction through a transfer printing technique . The responsivity of the photodetector increased from 2.2 to 7.52 A W −1 when the applied voltage increased from zero to −3 V. Moreover, this broadband photodetector can work in the spectral range from 400 to 1200 nm with rise/fall response times of 13/16 ms.…”

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

“…In comparison to narrowband PDs, broadband PDs can meet the demands of ultraviolet-visible-infrared light communication, wide spectral switches or memory storage by using only a single device. To date, significant efforts have been focused on the development of broadband PDs based on quantum dots 5 , inorganic nanomembranes 6 and organic perovskite 7 , but these developed devices are still limited by a slow response speed and relatively short detection range. To date, a challenge still remains for simultaneously achieving a faster response speed and broader detection range by exploring new materials.…”

“…Compared with their thin film counterparts, vertically standing silicon nanowire array (SiNWA) structures can strongly suppress light reflection, increase the interfacial area, facilitate fast charge transport and enhance charge collection by shortening the travel paths of minority carriers 9,10 . However, the spectral response of Si-based PDs is limited by the natural bandgap (~1.12 eV), corresponding to a range of 400-1100 nm 6,11 . To develop Si-based PDs with a broadband response, heterostructures with various designs have been suggested, including a heterojunction between Si and an organic semiconductor for extending photodetection to the ultraviolet (UV) region 12 , and heterogeneous integration of Si with Ge to provide sensitivity to the infrared (IR) region 13 .…”