The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe 2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe 2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe 2 films by simple selenization method for the design of a PtSe 2 /Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 10 13 Jones at −5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe 2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe 2 /Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

Polycrystalline 2D layered molybdenum disulfide (MoS) films were synthesized via a thermal decomposition method. The MoS/Si heterostructures were constructed in situ by synthesis MoS on plane Si substrates. Such MoS/Si heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of 1.63×10 Jones, and a fast response speed of 21.6/65.5 μs were achieved. Notably, the MoS/Si heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between MoS and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that MoS/Si heterostructures could have great potential in optoelectronic applications.

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