High-performance self-powered deep ultraviolet photodetector based on MoS₂/GaN p–n heterojunction

Abstract

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

Graphene‐Assisted Growth of Patterned Perovskite Films for Sensitive Light Detector and Optical Image Sensor Application

“…Clearly, the device can follow such a rapid optical signal with distinct on and off states, indicating a fast response speed of out device. Furthermore, the rise and decay times (τ r and τ f , defined as the duration needed for the photoresponse to rise (decay) from 10% (90%) to 90% (10%)) were estimated to be 13.7 and 14.9 µs, respectively . Such a rapid response speed is comparable with that of an ambipolar perovskite film phototransistor (6.5/5.0 µs), and much faster than a perovskite network photodetector (0.3/0.4 ms) in previous studies …”

High‐Performance Ultraviolet‐Visible Light‐Sensitive 2D‐MoS2/1D‐ZnO Heterostructure Photodetectors

“…Adjusting the light intensity from 5.7 to 47.2 mW/cm 2 (365 nm light) and 0.525 to 56.7 mW/cm 2 (532 nm light), the photocurrent at a bias of +5 V is able to be regulated in the range of 33.6–88.2 nA and 0.3–1.86 nA, respectively. The relationship between the light intensity (365 nm and 532 nm light) and photocurrent is plotted in Figure c and d, respectively, which can be described by the following power law function: …”

Scalable integration of periodically aligned 2D-MoS2 nanoribbon array

“…Since the early report on exfoliated MoS 2 , 3 a variety of synthetic methods [4][5][6] have been developed, leading to profound achievements in material and device properties. [7][8][9][10][11] Recently, there is a growing interest in applying 2D-MoS 2 nanostructures for sensor applications. However, fabricating robust 2D-MoS 2 nanostructures remains challenging due to the vulnerability of 2D materials to existing lithographic patterning processes.…”