Polarization-sensitive photodetection in a broad spectrum range is highly desired due to the great significance in military and civilian applications. Palladium diselenide (PdSe2), a newly explored air-stable, group 10 two-dimensional (2D) noble metal dichalcogenide with a puckered pentagonal structure, holds promise for polarization-sensitive photodetection. Herein, we report a highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. Owing to the enhanced light absorption of the mixed-dimensional van der Waals heterojunction and the effective carrier collection with graphene transparent electrode, the photodetector exhibits superior device performance in terms of a large photoresponsivity, a high specific detectivity, a fast response speed to follow nanosecond pulsed light signal, and a broadband photosensitivity ranging from deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly polarization-sensitive broadband photodetection with an ultrahigh polarization sensitivity of 112.2 is achieved, which represents the best result for 2D layered material-based photodetectors. Further, we demonstrated the high-resolution polarization imaging based on the heterojunction device. This work reveals the great potential of 2D PdSe2 for high-performance, air-stable, and polarization-sensitive broadband photodetectors.

Palladium diselenide (PdSe 2 ), a thus far scarcely studied group-10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures and electrical properties. Here, the controllable synthesis of wafer-scale and homogeneous 2D PdSe 2 film is reported by a simple selenization approach. By choosing different thickness of precursor Pd layer, 2D PdSe 2 with thickness of 1.2-20 nm can be readily synthesized. Interestingly, with the increase in thickness, obvious redshift in wavenumber is revealed by Raman spectroscopy. Moreover, in accordance with density functional theory (DFT) calculation, optical absorption and ultraviolet photoemission spectroscopy (UPS) analyses confirm that the PdSe 2 exhibits an evolution from a semiconductor (monolayer) to semimetal (bulk). Further combination of the PdSe 2 layer with Si leads to a highly sensitive, fast, and broadband photodetector with a high responsivity (300.2 mA W −1 ) and specific detectivity (≈10 13 Jones). By decorating the device with black phosphorus quantum dots, the device performance can be further optimized. These results suggest the asselenized PdSe 2 is a promising material for optoelectronic application.

Perovskite light-emitting diodes (PeLEDs), because of its fundamental scientific importance and practical applications in the fields of low-cost light source or display applications, have drawn worldwide attention in recent years. However, PeLEDs available today suffer from a compromise in their emission efficiency and operation stability. In this study, we designed and fabricated a stacking all-inorganic multilayer structure by using inorganic perovskite CsPbBr quantum dots (QDs) as the emissive layer and inorganic n-type MgZnO and p-type MgNiO as the carrier injectors, respectively. Through energy band engineering of carrier injectors by Mg incorporation and their thickness optimization, PeLEDs with maximum luminance of 3809 cd/m, luminous efficiency of 2.25 cd/A, and external quantum efficiency of 2.39% have been realized, which are much better than most PeLEDs from CHNHPbBr films, and comparable with the highest results reported on CsPbBr QDs LEDs. More importantly, the unencapsulated PeLEDs in a continuous current mode demonstrate a remarkable operation stability against water and oxygen degradation. After a continuous operation for 10 h under a dc bias (10.0 V), nearly 80% of the original efficiency of the PeLEDs has been retained, greatly superior to reference and other previously reported devices constructed with conventional organic carrier injectors. Our results obtained open possibilities for the design and development of high-efficiency and air-stable PeLEDs that are not dependent on expensive and less-stable organic carrier injectors.

Great successes have been achieved in developing perovskite light-emitting devices (LEDs) with blue, green, red, and near-infrared emissions. However, as key optoelectronic devices, yellow-colored perovskite LEDs remain challenging, mainly due to the inevitable halide separation in mixed halide perovskites under high bias, causing undesired color change of devices. In addition to this color-missing problem, the intrinsic toxicity and poor stability of conventional lead-halide perovskites also restrict their practical applications. We herein report the fabrication of stable yellow LEDs based on a ternary copper halide CsCu2I3, addressing the color instability and toxicity issues facing current perovskite yellow LED’s compromise. Joint experiment–theory characterizations indicate that the yellow electroluminescence originates from the broadband emission of self-trapped excitons centered at 550 nm as well as the comparable and reasonably low carrier effective masses favorable for charge transport. With a maximum luminance of 47.5 cd/m2 and an external quantum efficiency of 0.17%, the fabricated yellow LEDs exhibit a long half-lifetime of 5.2 h at 25 °C and still function properly at 60 °C with a half-lifetime of 2.2 h, which benefits from the superior resistance of CsCu2I3 to heat, moisture, and oxidation in ambient environmental conditions. The results obtained promise the copper halides with broadband light emission as an environment-friendly and stable yellow emitter for the LEDs compatible with practical applications.

Currently, the blue perovskite light-emitting diodes (PeLEDs) suffer from a compromise in lead toxicity and poor operation stability, and most previous studies have struggled to meet the crucial blue NTSC standard. In this study, electrically driven deep-blue LEDs (∼445 nm) based on zero-dimensional (0D) Cs3Cu2I5 nanocrystals (NCs) were demonstrated with the color coordinates of (0.16, 0.07) and a high external quantum efficiency of ∼1.12%, comparable with the best-performing blue LEDs based on lead-halide perovskites. Encouraged by the remarkable stability of Cs3Cu2I5 NCs against heat and environmental oxygen/moisture, the proposed device was operated in a continuous current mode for 170 h, producing a record half-lifetime of ∼108 h. The device stability was further verified by an aggressive thermal cycling test (300–360–300 K) and a 35-day storage test. Together with the eco-friendly features and facile colloidal synthesis technique, the 0D Cs3Cu2I5 NCs can be therefore regarded as a promising candidate for deep-blue LEDs applications.