The nonlinear optical property of few-layered MoS₂ nanoplatelets synthesized by the hydrothermal exfoliation method was investigated from the visible to the near-infrared band using lasers. Both open-aperture Z-scan and balanced-detector measurement techniques were used to demonstrate the broadband saturable absorption property of few-layered MoS₂. To explore its potential applications in ultrafast photonics, we fabricated a passive mode locker for ytterbium-doped fibre laser by depositing few-layered MoS₂ onto the end facet of optical fiber by means of an optical trapping approach. Our laser experiment shows that few-layer MoS₂-based mode locker allows for the generation of stable mode-locked laser pulse, centered at 1054.3 nm, with a 3-dB spectral bandwidth of 2.7 nm and a pulse duration of 800 ps. Our finding suggests that few-layered MoS₂ nanoplatelets can be useful nonlinear optical material for laser photonics devices, such as passive laser mode locker, Q-switcher, optical limiter, optical switcher and so on.
Polarization-sensitive
photodetection in a broad spectrum range
is highly desired due to the great significance in military and civilian
applications. Palladium diselenide (PdSe2), a newly explored
air-stable, group 10 two-dimensional (2D) noble metal dichalcogenide
with a puckered pentagonal structure, holds promise for polarization-sensitive
photodetection. Herein, we report a highly polarization-sensitive,
broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction. Owing to the enhanced light absorption
of the mixed-dimensional van der Waals heterojunction and the effective
carrier collection with graphene transparent electrode, the photodetector
exhibits superior device performance in terms of a large photoresponsivity,
a high specific detectivity, a fast response speed to follow nanosecond
pulsed light signal, and a broadband photosensitivity ranging from
deep ultraviolet (DUV) to mid-infrared (MIR). Significantly, highly
polarization-sensitive broadband photodetection with an ultrahigh
polarization sensitivity of 112.2 is achieved, which represents the
best result for 2D layered material-based photodetectors. Further,
we demonstrated the high-resolution polarization imaging based on
the heterojunction device. This work reveals the great potential of
2D PdSe2 for high-performance, air-stable, and polarization-sensitive
broadband photodetectors.
By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potentially give some new insights into two-dimensional layered materials related photonics.
Solution‐processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI3 perovskite (CsPbI3‐P) coating on PbS CQDs with a low‐temperature, solution‐processed approach is reported. The PbS CQD solar cell with CsPbI3‐P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long‐term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI3‐P coating, and the results suggest that the lattice coherence between CsPbI3‐P and PbS results in epitaxial induced growth of the CsPbI3‐P coating. The improved passivation significantly diminishes the sub‐bandgap trap‐state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.
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