Rapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes’ (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials’ exciton binding energy (Eb). Thus, Auger recombination can be suppressed by reducing the corresponding materials’ Eb. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced Eb. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA+ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m−2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.

Device performance and in particular device stability for blue perovskite light-emitting diodes (PeLEDs) remain considerable challenges for the whole community. In this manuscript, we conceive an approach by tuning the ‘A-site’ cation composition of perovskites to develop blue-emitters. We herein report a Rubidium-Cesium alloyed, quasi-two-dimensional perovskite and demonstrate its great potential for pure-blue PeLED applications. Composition engineering and in-situ passivation are conducted to further improve the material’s emission property and stabilities. Consequently, we get a prominent film photoluminescence quantum yield of around 82% under low excitation density. Encouraged by these findings, we finally achieve a spectra-stable blue PeLED with the peak external quantum efficiency of 1.35% and a half-lifetime of 14.5 min, representing the most efficient and stable pure-blue PeLEDs reported so far. The strategy is also demonstrated to be able to generate efficient perovskite blue emitters and PeLEDs in the whole blue spectral region (from 454 to 492 nm).

During the past decade, inorganic CQDs, namely the lead chalcogenides (e.g., PbS), have attracted tremendous attention in solution-processed solar cells. Due to the great efforts on CQDs synthesis modification, [7][8][9] surface passivation, [10][11][12] and device fabrication optimization, [13][14][15][16] PbS QD solar cells continue to progress at an extraordinary rate, improving overall efficiencies by ≈1% per year and currently have a certified power conversion efficiency (PCE) exceeding 12%. [17] Meanwhile, the past decade has witnessed unprecedented success of organicinorganic hybrid perovskites in PV applications, with the reported PCE of perovskite solar cells exceeding 23%. [18][19][20][21][22][23][24][25][26][27][28] However, the challenging stability issues of these hybrid perovskites further motivate the research of all-inorganic perovskites (CsPbX 3 , X = Cl − , Br − , I − or mixed halides) without any volatile organic components. [29][30][31][32][33][34][35][36][37][38] Among these all-inorganic perovskite materials, α-CsPbI 3 exhibits an ideal optical bandgap (E g ) of 1.73 eV for PV applications. However, the nonphotoactive orthorhombic phase (E g = 2.82 eV) is more thermodynamically preferred at low temperature. [29] Therefore, the perovskite phase of CsPbI 3 usually requires complex annealing processes at high temperature to achieve satisfactory film quality. As mentioned above, QD technology offers colloidal synthesis of conventional bulk materials, which Surface manipulation of quantum dots (QDs) has been extensively reported to be crucial to their performance when applied into optoelectronic devices, especially for photovoltaic devices. In this work, an efficient surface passivation method for emerging CsPbI 3 perovskite QDs using a variety of inorganic cesium salts (cesium acetate (CsAc), cesium idodide (CsI), cesium carbonate (Cs 2 CO 3 ), and cesium nitrate (CsNO 3 )) is reported. The Cs-salts post-treatment can not only fill the vacancy at the CsPbI 3 perovskite surface but also improve electron coupling between CsPbI 3 QDs. As a result, the free carrier lifetime, diffusion length, and mobility of QD film are simultaneously improved, which are beneficial for fabricating high-quality conductive QD films for efficient solar cell devices. After optimizing the post-treatment process, the short-circuit current density and fill factor are significantly enhanced, delivering an impressive efficiency of 14.10% for CsPbI 3 QD solar cells. In addition, the Cs-salt-treated CsPbI 3 QD devices exhibit improved stability against moisture due to the improved surface environment of these QDs. These findings will provide insight into the design of high-performance and low-trap-states perovskite QD films with desirable optoelectronic properties. Perovskite Quantum DotsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.Solution-processed colloidal quantum dots (CQDs) are promising candidates for the next generation photovoltaics (PVs) due to the excellent tuna...

Chiral quasi‐2D perovskite single crystals (SCs) were investigated for their circular polarized light (CPL) detecting capability. Quasi‐2D chiral perovskites, [(R)‐β‐MPA]2MAPb2I7 ((R)‐β‐MPA=(R)‐(+)‐β‐methylphenethylamine, MA=methylammonium), have intrinsic chirality and the capability to distinguish different polarization states of CPL photons. Corresponding quasi‐2D SCs CPL photodetector exhibit excellent detection performance. In particular, our device responsivity is almost one order of magnitude higher than the reported 2D perovskite CPL detectors to date. The crystallization dynamics of the film were modulated to facilitate its carrier transport. Parallel oriented perovskite films with a homogeneous energy landscape is crucial to maximize the carrier collection efficiency. The photodetector also exhibits superior mechanical flexibility and durability, representing a promising candidate for sensitive and robust CPL photodetectors.

Great successes have been achieved in developing perovskite light-emitting devices (LEDs) with blue, green, red, and near-infrared emissions. However, as key optoelectronic devices, yellow-colored perovskite LEDs remain challenging, mainly due to the inevitable halide separation in mixed halide perovskites under high bias, causing undesired color change of devices. In addition to this color-missing problem, the intrinsic toxicity and poor stability of conventional lead-halide perovskites also restrict their practical applications. We herein report the fabrication of stable yellow LEDs based on a ternary copper halide CsCu2I3, addressing the color instability and toxicity issues facing current perovskite yellow LED’s compromise. Joint experiment–theory characterizations indicate that the yellow electroluminescence originates from the broadband emission of self-trapped excitons centered at 550 nm as well as the comparable and reasonably low carrier effective masses favorable for charge transport. With a maximum luminance of 47.5 cd/m2 and an external quantum efficiency of 0.17%, the fabricated yellow LEDs exhibit a long half-lifetime of 5.2 h at 25 °C and still function properly at 60 °C with a half-lifetime of 2.2 h, which benefits from the superior resistance of CsCu2I3 to heat, moisture, and oxidation in ambient environmental conditions. The results obtained promise the copper halides with broadband light emission as an environment-friendly and stable yellow emitter for the LEDs compatible with practical applications.