Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction

Wu, Di; Lou, Zhenhua; Wang, Yuange; Yao, Zhiqiang; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian; Tsang, Yuen Hong

doi:10.1016/j.solmat.2018.03.017

Cited by 78 publications

(34 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Linear dynamic range (LDR) is another key parameter for photodetector, which is defined by the following equation

LDR = 20 \log (I_{normalp} / I_{normald})

where I p represents the photocurrent measured at a light intensity of 9.38 µW cm −2 . An LDR of 74.8 dB is obtained for Si NWs/CIGS‐2, which outperforms Si/Se heterojunction (72.6 dB), and the commercialized InGaAs photodiodes (66 dB) …”

Section: Resultsmentioning

confidence: 97%

“…The low current at −1 V bias and high current at +1 V bias result in a large rectifying ratio of 88. For an ideal diode, the I–V characteristic can be described by the following equation

I = I_{0} (e^{\frac{q V_{normalDS}}{n k_{B} T}} - 1)

…”

Section: Resultsmentioning

confidence: 99%

“…Hence, the ideality factor n will be expressed as

n = \frac{q}{K_{normalB} T} \frac{d V}{dln I}

where q , I 0 , K B , and T represent the electron charge, reverse bias leakage current, the Boltzmann constant, and the temperature in Kelvin, respectively. When we fit the rectification curve, an ideality factor n of 1.05 can be obtained in the low‐bias zone, which is close to the theoretical value ( n = 1) …”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Chen

Tian

Min

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

to the high conductivity and transparency of graphene. [8] Nevertheless, high dark current arising from the gapless of graphene is detrimental to the responsivity and detectivity of this hybrid system. Si/ metal sulfide system suffers from severe recombination due to a large number of trap defects in low-crystalline sulfides that are grown by the hydrothermal or solvothermal processes. [9] Therefore, it is essential to develop promising semiconductors to couple with Si to enhance the photoelectric performance.In addition, when constructing Si NW-based heterojunction for high-performance, broadband, and self-powered photodetectors, the following factors should be considered: i) the deposition approach. The growth strategy for the outer semiconductor should be compatible with Si NW, and the process will not damage the structure and conductivity of Si. ii) The device configuration. Low-dimensional architecture can effectively suppress the dark current, and promote the charge carrier separation and transportation. iii) The physical parameters of the semiconductor itself. The bandgap of the semiconductor should be as small as Si to ensure wide absorption range, and their band alignment must be suitable to guarantee efficient charge separation and transfer across interfaces. CuIn x Ga 1−x Se 2 (CIGS) in its chalcopyrite phase has attracted considerable interest as a promising p-type light absorber, owing to its tunable band energy (1.0-1.7 eV), large optical absorption coefficient (≈10 5 cm −1 ), outstanding thermal, environmental and electrical stabilities. [10][11][12] In terms of application, CIGS thin films have been used in thin-film solar cells, solar modules, and photoelectrochemical photocathodes. [13][14][15] The above-stated excellent features also make CIGS great potential application in broadband photodetection. For example, Pan and co-workers designed an indium tin oxide (ITO)/ZnO/CdS/ CIGS/Mo heterojunction on the polyimide substrate to form a flexible CIGS heterojunction photodetector. [11] Wang and coworkers demonstrated a visible-NIR optical position sensitive detectors based on Mo/CIGS/CdS/ZnO/ITO/glass structure. [16] Although several investigations on the photodetector application of CIGS have been carried out, and impressive performances are demonstrated, the devices reported are usually built of CIGS thin-film based multilayer heterojunction. The bulk film and the multiple interfaces possibly bring about severe charge carrier recombination, limiting the photoelectric performance. In addition, a CdS layer is always inserted into the Designing Si nanowire-based heterostructures provides a promising path to construct self-driven and broadband photodetectors, which are the key components for optoelectronic systems. Herein, the first fabrication of a p-CuIn 0.7 Ga 0.3 Se 2 nanoparticles/n-Si nanowire array core-shell structure through a simple two-stage process-spin coating and selenization treatment-and its integration into a self-driven photodetector are reported. The heterojunction photodetector is ...

show abstract

“…Linear dynamic range (LDR) is another key parameter for photodetector, which is defined by the following equation

LDR = 20 \log (I_{normalp} / I_{normald})

Section: Resultsmentioning

confidence: 97%

“…The low current at −1 V bias and high current at +1 V bias result in a large rectifying ratio of 88. For an ideal diode, the I–V characteristic can be described by the following equation

I = I_{0} (e^{\frac{q V_{normalDS}}{n k_{B} T}} - 1)

…”

Section: Resultsmentioning

confidence: 99%

“…Hence, the ideality factor n will be expressed as

n = \frac{q}{K_{normalB} T} \frac{d V}{dln I}

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Chen

Tian

Min

et al. 2019

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…An ultra-fast fast response/recovery speed of 33/30 µs respectively were measured when the device was illuminated with a wavelength of around 515–520 nm. Wu et al developed MoS 2 /Si nanowire array hetero-junction shown in Figure 13 i [ 183 ]. The device was illuminated with a 650 nm radiation, a responsivity of 53.5 A/W and a fast response/recovery speed of 2.9/7.3 μs respectively were reported [ 183 ].…”

Section: Performance Of Photodetectors Based On Mosmentioning

confidence: 99%

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

et al. 2020

View full text Add to dashboard Cite

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

show abstract

“…[3][4][5][6][7][8][9][10][11][12] Furthermore, TMD materials exhibit superior photoluminescence behavior, 3,4 piezoelectric properties, 13,14 and controllable optical performance by modulating valleys in the k space. [15][16][17][18] The development of several optoelectronic devices, such as strain sensors, 19 transistors, 20 and highly sensitive and broadband photodetectors [21][22][23] will highly benet from the assistance of these inherent properties.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of PdS₂ and PdSe₂ quantum dots

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction

Cited by 78 publications

References 48 publications

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Photoluminescence of PdS₂ and PdSe₂ quantum dots

Contact Info

Product

Resources

About

Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction

Cited by 78 publications

References 48 publications

Si/CuIn0.7Ga0.3Se2 Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Si/CuIn0.7Ga0.3Se2 Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Photoluminescence of PdS2 and PdSe2 quantum dots

Contact Info

Product

Resources

About

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Si/CuIn_0.7Ga_0.3Se₂ Core–Shell Heterojunction for Sensitive and Self‐Driven UV–vis–NIR Broadband Photodetector

Photoluminescence of PdS₂ and PdSe₂ quantum dots