2008 European Microwave Integrated Circuit Conference 2008
DOI: 10.1109/emicc.2008.4772305
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Alumina and LTCC Technology for RF MEMS Switches and True Time Delay Lines

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Cited by 4 publications
(4 citation statements)
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“…The TTD lines fabricated on GaAs and Si substrates [1], [2] provide a very small group delay within an acceptable insertion loss, in other words, they have poor FOM values. The TTD lines built on alumina and LTCC [3], [4] have a low FOM value due to a low substrate loss. However, the alumina and LTCC are substrates used for the system-level passive device fabrication and system integration, they are not suitable TABLE II COMPARISON OF REPORTED TTD LINES AND OUR WORK for chip-level device fabrication.…”
Section: Resultsmentioning
confidence: 99%
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“…The TTD lines fabricated on GaAs and Si substrates [1], [2] provide a very small group delay within an acceptable insertion loss, in other words, they have poor FOM values. The TTD lines built on alumina and LTCC [3], [4] have a low FOM value due to a low substrate loss. However, the alumina and LTCC are substrates used for the system-level passive device fabrication and system integration, they are not suitable TABLE II COMPARISON OF REPORTED TTD LINES AND OUR WORK for chip-level device fabrication.…”
Section: Resultsmentioning
confidence: 99%
“…In modern portable communication systems, many desirable features are required for the delay lines, such as compact size, integration with monolithic microwave integrated circuit (MMIC), constant and large delay, low insertion loss, and zero or low control power or voltage. Various topologies were used to build delay lines for the microwave circuits and systems, including RF MEMS with microstrip line on GaAs, alumina, and LTCC substrates [1]- [4], ferroelectric varactor with coplanar strip (CPS) line on high resistivity Si substrate [5], superconducting coplanr waveguide (CPW) line and coplanar double-spiral meander line on substrate [6], right/left-handed transmission line on PCB substrate [7], spiral microstrip line on InP substrate [8], shielded CPW line on GaAs substrate [9], and polyimide core micro-coaxial line on Si substrate [10].…”
Section: Introductionmentioning
confidence: 99%
“…A comprehensive overview of early digital millimeter-wave phase shifters is given in [1]. State of the art results were reported from many groups [2][3][4][5][6]. At E-band (77 GHz), insertion loss amounts to about 1.75 dB per bit [7] (or, 5.8 dB for 3 bits [8]).…”
Section: Introductionmentioning
confidence: 96%
“…MEMS devices such as switches [13][14][15] and varactors [16,17] are fabricated on a variety of materials including silicon, gallium arsenide, silicon dioxide, LTCC, and ceramic.…”
Section: Mems Devicesmentioning
confidence: 99%