Aluminium- and indium-doped zinc oxide thin films prepared by DC magnetron reactive sputtering

Harding, G.L.; Window, B.; Horrigan, E.C.

doi:10.1016/0165-1633(91)90007-8

Cited by 55 publications

(22 citation statements)

References 31 publications

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“…On the other hand, large number of efforts have been devoted to replace ITO by other materials, e.g., Al-doped ZnO [4][5][6][7][8][9], Ga-doped ZnO [8][9][10], Zr-doped ZnO [9,11], and Nb-doped TiO 2 [12], because of the limitation of the resource of indium. It was reported that the Sb-doped BaSnO 3 is one of the candidates for the transparent conducting oxides without indium [13,14].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure analysis of Sb-doped BaSnO3

Yamashita

Takefuji

Tsubomoto

et al. 2010

Materials Science and Engineering: B

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Section: Introductionmentioning

confidence: 99%

Electronic structure analysis of Sb-doped BaSnO3

Yamashita

Takefuji

Tsubomoto

et al. 2010

Materials Science and Engineering: B

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“…Indium-doped zinc oxide (IZO) thin films have been accomplished using different techniques, including spray pyrolysis [2]- [10], chemical vapor deposition [11], e-beam evaporation [12], pulsed laser deposition [13]- [15], and sputtering [16]- [20]. Most of these techniques require sophisticated instruments and/or high deposition temperature.…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

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Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

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“…Applications such as solar cells had already been reported in the 90's using zinc oxide doped with aluminum with properties superior to zinc oxide doped with indium in terms of resistivity and transparency (Harding et al, 1991;Martínez et al, 1997). Later, its chemical (Yoo et al, 2005) and thermal stability differential during processing (Mosbah and Aida, 2012) was also reported.…”

Section: Introductionmentioning

confidence: 95%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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Aluminium- and indium-doped zinc oxide thin films prepared by DC magnetron reactive sputtering

Cited by 55 publications

References 31 publications

Electronic structure analysis of Sb-doped BaSnO3

Electronic structure analysis of Sb-doped BaSnO3

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Optical and Structure Analysis of ZnO:Al Film

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