Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited <i>via</i> aerosol assisted CVD

Potter, Dominic B.; Powell, Michael; Parkin, Ivan P.; Carmalt, Claire J.

doi:10.1039/c7tc04003b

Cited by 84 publications

(36 citation statements)

References 107 publications

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“…ZnO thin films are conventionally doped and co-doped with a number of proper dopants to improve their optical and electrical properties [12]. In principle, we investigate the optical and structural properties of sol-gel dip-synthesized group III (B, Al, Ga, and In)-doped ZnO thin films in this current work.…”

Section: Introductionmentioning

confidence: 99%

“…In principle, we investigate the optical and structural properties of sol-gel dip-synthesized group III (B, Al, Ga, and In)-doped ZnO thin films in this current work. The structural, transport, and optical properties of B-doped ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO thin films are found to exhibit different properties than un-doped ZnO thin films [8,[12][13][14][15][16][17][18][19][20]. Deposition of undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films can be achieved by using techniques such chemical vapor deposition [2,21], magnetron sputtering [15,22], pulse laser deposition [23], electrochemical deposition [24], and the sol-gel method [14,25].…”

Section: Introductionmentioning

confidence: 99%

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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“…I Film synthesis AACVD depositions were performed as detailed in previous work. [17][18][19] Nitrogen (99.99%, BOC, Surrey, UK) was used as the carrier gas. All chemicals were obtained from Sigma Aldrich (Dorset, UK), and were used as purchased, without further purication.…”

Section: Methodsmentioning

confidence: 99%

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

2018

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“…In band gap engineering through doping of single or several impurities, the recombination probability of excited electrons and holes is very high near doping sites, which include deteriorative crystal defects such as lattice mismatch at the interface between the sensitizers and wide-band-gap semiconductors, unstable inherent disorders [20], and charge imbalance among dopants. Hence, even though the absorption of visible light is improved by doping, these recombination sites can cause significant loss of photocatalytic current during the separation and transfer of visible-light-excited electrons and holes.…”

Section: Introductionmentioning

confidence: 99%

Heterojunction Photoelectrode of Polyaniline/ZnS Film/ZnO Nanorod on FTO Glass

Kim¹,

Yang²

2019

MSA

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Results of publication (only one response allowed): X are still valid.  were found to be overall invalid. Author's conduct (only one response allowed):  honest error  academic misconduct X none (not applicable in this case-e.g. in case of editorial reasons) * Also called duplicate or repetitive publication. Definition: "Publishing or attempting to publish substantially the same work more than once." History Expression of Concern:  yes, date: yyyy-mm-dd X no Correction:  yes, date: yyyy-mm-dd X no Comment: This article has been retracted to straighten the academic record. In making this decision the Editorial Board follows COPE's Retraction Guidelines. Aim is to promote the circulation of scientific research by offering an ideal research publication platform with due consideration of internationally accepted standards on publication ethics. The Editorial Board would like to extend its sincere apologies for any inconvenience this retraction may have caused.

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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Abstract: Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

Cited by 84 publications

References 107 publications

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

Heterojunction Photoelectrode of Polyaniline/ZnS Film/ZnO Nanorod on FTO Glass

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