Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Alsaad, Ahmad; Ahmad, Ahmad A.; Qattan, I. A.; Al‐Bataineh, Qais M.; Albataineh, Zaid

doi:10.3390/cryst10040252

Cited by 72 publications

(29 citation statements)

References 67 publications

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“…It was clear from Figure 4; the refractive index of the films decreased as the wavelength increased. The same phenomena is observed by A. M. Alsaad et al (52,53).…”

Section: Optical Propertiessupporting

confidence: 85%

Structural, optical and electrical properties of Aluminum doped ZnO, CuO and their heterojunction fabricated using spin coating and Rf-Sputtering techniques

Agdad¹

2020

IJST

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Objectives: The aim of this work is to fabricate and analyze the Aluminum Doped ZnO, Copper Oxide CuO and their heterojunction CuO/ZnO:Al using Spin Coating and Rf-Sputtering techniques. Methods: ZnO:Al was synthesized from a sol-gel precursor and deposited on Indium Tin Oxide-coated glass substrate ITO using spin coating. CuO thin films, on the other hand, were elaborated by RF-sputtering. The characterization of both thin films was performed by means of X-ray diffraction, scanning electron microscopy and UV-visible-NIR double beam spectrophotometer. The CuO/ZnO:Al heterojunction was fabricated and characterized using current voltage, capacitance-voltage and conductancevoltage measurements. Findings: The collected results confirm the rectifying nature of the junction with a built-in voltage V bi of about 1.6 V.

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“…It was clear from Figure 4; the refractive index of the films decreased as the wavelength increased. The same phenomena is observed by A. M. Alsaad et al (52,53).…”

Section: Optical Propertiessupporting

confidence: 85%

Structural, optical and electrical properties of Aluminum doped ZnO, CuO and their heterojunction fabricated using spin coating and Rf-Sputtering techniques

Agdad¹

2020

IJST

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“…The extinction coefficient k for all samples was calculated using the formula

where

is the absorption coefficient defined by

where d is the thickness of thin films estimated to be 250 nm [ 48 , 49 ]. The use of inorganic ceria nanoparticles into the polymer matrix can provide high-performance novel materials that find applications in many industrial fields.…”

Section: Resultsmentioning

confidence: 99%

Synthesis, Optical, Chemical and Thermal Characterizations of PMMA-PS/CeO2 Nanoparticles Thin Film

et al. 2021

Self Cite

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We report the synthesis of hybrid thin films based on polymethyl methacrylate) (PMMA) and polystyrene (PS) doped with 1%, 3%, 5%, and 7% of cerium dioxide nanoparticles (CeO2 NPs). The As-prepared thin films of (PMMA-PS) incorporated with CeO2 NPs are deposited on a glass substrate. The transmittance T% (λ) and reflectance R% (λ) of PMMA-PS/CeO2 NPs thin films are measured at room temperature in the spectral range (250–700) nm. High transmittance of 87% is observed in the low-energy regions. However, transmittance decreases sharply to a vanishing value in the high-energy region. In addition, as the CeO2 NPs concentration is increased, a red shift of the absorption edge is clearly observed suggesting a considerable decrease in the band gap energy of PMMA-PS/CeO2 NPs thin film. The optical constants (n and k) and related key optical and optoelectronic parameters of PMMA-PS/Ce NPs thin films are reported and interpreted. Furthermore, Tauc and Urbach models are employed to elucidate optical behavior and calculate the band gaps of the as-synthesized nanocomposite thin films. The optical band gap energy of PMMA-PS thin film is found to be 4.03 eV. Optical band gap engineering is found to be possible upon introducing CeO2 NPs into PMMA-PS polymeric thin films as demonstrated clearly by the continuous decrease of optical band gap upon increasing CeO2 content. Fourier-transform infrared spectroscopy (FTIR) analysis is conducted to identify the major vibrational modes of the nanocomposite. The peak at 541.42 cm−1 is assigned to Ce–O and indicates the incorporation of CeO2 NPs into the copolymers matrices. There were drastic changes to the width and intensity of the vibrational bands of PMMA-PS upon addition of CeO2 NPs. To examine the chemical and thermal stability, thermogravimetric (TGA) thermograms are measured. We found that (PMMA-PVA)/CeO2 NPs nanocomposite thin films are thermally stable below 110 °C. Therefore, they could be key candidate materials for a wide range of scaled multifunctional smart optical and optoelectronic devices.

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“…In general, = 1 2 for direct allowed transition, and = 3 2 for indirect forbidden transitions. Skin depth ( ) that measured the degree of penetration of photons within the surface of the deposited cobalt selenide thin films was estimated using equation (11) as presented by [38,39]. Figure 4 shows the graph of absorbance of the films plotted against wavelength.…”

Section: Optical Propertiesmentioning

confidence: 99%

Effect of SILAR Cycles on the Thickness, Structural, Optical Properties of Cobalt Selenide Thin Films

N.J

V.C²,

Okoli

et al. 2021

Int. Res. J. multidiscip. Technovation

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Cobalt Selenide thin films were fabricated using Successive Ionic Layer Adsorption and Reaction (SILAR) deposition technique at different SILAR cycles. The precursors for Cobalt and Selenium ions were CoCl2.6H2O and Na2SeSO3 respectively. Optical properties and thickness of the deposited films were studied to determine the effect of number of SILAR cycles on these properties. The optical absorbance of the films was found to decrease as wavelength increases and increases as SILAR cycle increases. Transmittance of the CoSe thin films was found to increase as the wavelength increases but decreases as number of SILAR cycles increased. The extinction coefficient of CoSe thin films decreases as wavelength increases but increases as the SILAR cycles increases. The energy band gap of CoSe thin films deposited decreases from 2.47 eV to 2.20 eV as number of SILAR cycles increases and film thickness increases from 92.96 nm and 225.63 nm. Structural properties of deposited cobalt selenide thin films showed that they correspond to orthorhombic phase of CoSe2 crystal structure of cobalt selenide thin films with crystallite size ranging from 7.63 nm to 13.07 nm.

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Cited by 72 publications

References 67 publications

Structural, optical and electrical properties of Aluminum doped ZnO, CuO and their heterojunction fabricated using spin coating and Rf-Sputtering techniques

Structural, optical and electrical properties of Aluminum doped ZnO, CuO and their heterojunction fabricated using spin coating and Rf-Sputtering techniques

Synthesis, Optical, Chemical and Thermal Characterizations of PMMA-PS/CeO2 Nanoparticles Thin Film

Effect of SILAR Cycles on the Thickness, Structural, Optical Properties of Cobalt Selenide Thin Films

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