Aluminum alloy film deposition and characterization

Learn, Arthur J.

doi:10.1016/0040-6090(74)90062-5

Cited by 20 publications

(12 citation statements)

References 12 publications

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“…l were 'present in t h e asdeposited condition. They were cop&r-rich eD 2kT F1/2(9*) and probably of CuAlz Composition [6]. In no case was a change in film structure or surface topography apparent for 5OOOC heat treatwhere F is a Fermi integral and $* is Fermi level energy from the ment up to 30 min.…”

Section: Type Inmentioning

confidence: 97%

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Limitations on high-temperature processing of aluminum-copper metallization

Learn

1973

Proc. IEEE

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type in Fig. 2(c), all such systems being fed in parallel. (This is a special case of (S).) Similarly for (lo), except that now the coefficients ci, replace the y;, in Fig. 2(c) and generate sensitivity system poles which cancel one pair of zeros in Y. Hence this method is not suitable in general for non-minimum-phase zeros, though one pair of such zeros may be accommodated in the last stage of the cascade, the sensitivities being obtained without the need for an additional model, as in Fig. 2(a).In view of the simplicity of Fig. 2(a) for sensitivities associated with numerator coefficients, it may be of advantage in general to use a scheme in which only the denominator polynomial is factored, the numerator being generated by means of a fully parallel feedforward structure, at the expense of increased sensitivities. Nevertheless, even if a cascaded numerator is used, the overall number of sensitivity models is only one for each polynomial factor in the transfer function, except for the last numerator factor in the cascade, for which the sensitivities remain available on the original system by the method of Fig. 2(a). REFERENCES (11 R. Tomovic, Scnsitiaity Analysis of Dynamic Sysfnu (transl.). New York: [Z] P. V. Kokotovic. 'Method of sensitivity points in the investigation and o p

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Section: Type Inmentioning

confidence: 97%

“…Alloy films were deposited by a flash evaporation technique [6] onto silicon wafers covered with a thermally grown layer of silicon dioxide. Windows were opened in the oxide to expose underlying silicon devices before deposition.…”

Section: Type Inmentioning

confidence: 99%

Limitations on high-temperature processing of aluminum-copper metallization

Learn

1973

Proc. IEEE

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“…For the application, we tried to deposit all of the material in one single flash. We developed a deposition tool, based on the flash evaporation technique [9].…”

Section: Flash Evaporationmentioning

confidence: 99%

Characterization and optimization of the deposition process of aluminum top electrodes for organic devices

et al. 2008

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We investigated the effect of thermal stress, caused by the deposition of aluminum on top of an organic light emitting diode (OLED), on the device performance and proved our simulated results by experimental tests. Concerning the temperature of the substrate, we found a much larger influence of thermal radiation, caused by the evaporation source and the environmental setting compared to the kinetic and thermal energy of the deposited material itself. Due to these results, we developed a new system for metal deposition, using the flash-evaporation technique. Using it, we were able to minimize the influence of thermal radiation and geometry on the evaporation. Therefore the substrate heating was reduced by more than 90 % and the photometric efficiencies of test-devices were improved slightly. Additionally the time of deposition and retention was lowered by 90 %, with an increased material yield of more than 55 % at the same time. The resistance of the conducting layer decreases by two orders of magnitude, caused by emerging micro crystals. Surprisingly, the roughness of the surface actually decreased slightly.

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“…This metallization system has been used successfully to reduce the formation of Si pits in single crystal Si substrates (7,8). This metallization system has been used successfully to reduce the formation of Si pits in single crystal Si substrates (7,8).…”

Section: The Efiect Of Ai-2% Si Alloy Metallization--finallymentioning

confidence: 99%

The Reduction of Poly‐Si Dissolution and Contact Resistance at Al/n‐Poly‐Si Interfaces in Integrated Circuits

Naguib

Hobbs

1978

J. Electrochem. Soc.

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In a previous investigation (1), we reported a rapid increase in A1/n-poly-Si contact resistance following 5 min isochronal sintering at temperatures in excess of 450~ This increase in contact resistance, Rc, was attributed to the precipitation of a p-type (Al-doped) layer on n-poly-Si with the consequent formation of a "quasi-Schottky diode." To minimize this effect, the thickness of this precipitated layer should be kept to a minimum. Practically, this can be achieved by: (i) decreasing the amount of A1 available for reaction by reducing the thickness of the A1 metallization; (ii) placing a Ti barrier film between the A1 layer and the Si substrate; or (iii) using A1-2% Si alloy. The aim of the present investigation is to evaluate the validity of these various metallization techniques for application in the fabrication of Si integrated circuit using standard processing techniques. ExperimentsThe phosphorus-doped poly-Si (CVD layer, 0.3 /~m thick, sheet resistivity of ,--17 ll/[]) resistors used in the present investigation were prepared using the same resistor structure and the same process sequences as described in the previous paper (1). The metallization systems used were the following: (i) A1 deposited by electron beam evaporation to thicknesses of 0.25 and 1.0 #m; (ii) a 0.25 ~m layer of Ti deposited by electron beam evaporation followed by 0.7 ~m of A1 deposited in the same pumping cycle; and (iii) an A1-2 weight percent (w/o) Si layer deposited by magnetron sputtering to a thickness of 1 ~m.The electrical measurements and SEM analysis were carried out after 5 min isochronal sintering at various temperatures in a N2 ambient. After sintering, all specimens were pulled out of the furnace rapidly (~15 sec) and then left (~5 rain) to cool down to room temperature in a N2 ambient. For SEM analysis, the A1 metallization was removed from the contact windows by chemical etching. Results and DiscussionThe effect of A1 thickness.--In our previous work (1) we observed that the increase in contact resistance, Re, is correlated with the increase in barrier heights of A1/Si junctions, r during sintering as reported by Chino (2). The increase arises from the precipitation at the interface of Si dissolved in the A1 during' sintering. Card (3) reported that the increase in ~bB is more pronounced for thicker A1 contacts. Accordingly, we * Electrochemical Society Active Member. Key words: aluminum metaltization, contact characterization. ohmic contacts, silicon technology.anticipated a similar effect of the A1 thickness on the contact resistance of A1/n-poly-Si contacts.The effect of sintering temperature on contact resistance of poly-Si resistors with 1 and 0.25 ~m A1 metallization is shown in Fig. 1. The average value of the contact resistance before sintering was 5 +_. 0.3~1. The results show that Re is slightly lower for 0.25 ~m A1 contacts than for 1 ~,m A1. The effect is more pronounced at high sintering temperatures in excess of 50O~ However, contacts with 0.25 ~m A1 layers still exhibit a significant increase in Rc f...

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Aluminum alloy film deposition and characterization

Cited by 20 publications

References 12 publications

Limitations on high-temperature processing of aluminum-copper metallization

Limitations on high-temperature processing of aluminum-copper metallization

Characterization and optimization of the deposition process of aluminum top electrodes for organic devices

The Reduction of Poly‐Si Dissolution and Contact Resistance at Al/n‐Poly‐Si Interfaces in Integrated Circuits

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