2005
DOI: 10.1016/j.jnoncrysol.2005.04.009
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Aluminum effect on photoluminescence properties of sol–gel-derived Eu3+-activated silicate glasses

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Cited by 34 publications
(22 citation statements)
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“…3 to have a clear distinguishability as in Ref. [39]. Lifetimes of the 5 D 0 level of Eu 3+ in both the glass systems are obtained by taking the first e-folding time of the decay intensity [40], and are presented in Table 6, along with experimental lifetimes of the 5 D 0 level in some reported Eu 3+ :glass systems.…”
Section: Decay Time Measurementsmentioning
confidence: 83%
“…3 to have a clear distinguishability as in Ref. [39]. Lifetimes of the 5 D 0 level of Eu 3+ in both the glass systems are obtained by taking the first e-folding time of the decay intensity [40], and are presented in Table 6, along with experimental lifetimes of the 5 D 0 level in some reported Eu 3+ :glass systems.…”
Section: Decay Time Measurementsmentioning
confidence: 83%
“…In that case, and considering that the rest of the oxygen atoms are bound to Tb ones, we estimate that there will be a minimum of 45% of Tb atoms in the form of Tb 2 O 3 . Even though the possibility of having Al-Tb-O ternary compounds cannot be ruled out 18,19 because Al and Tb atoms are homogeneously distributed in the Al/Tb/Al stack (as observed by TEM measurements). For the sample with no Al, the situation is much different: the oxygen-to-silicon ratio is exactly 2.0, indicating that no extra oxygen is added to the Tb layers.…”
Section: A Structural Characterizationmentioning
confidence: 99%
“…In the literature, and in combination with SiO 2 , aluminum has been widely employed for dispersing RE ions and thus allows for a higher RE incorporation without clustering. 18,19 Different methods have been employed to combine these materials, being ion implantation, 16 thermal evaporation in effusion cells, 20 or plasma-enhanced chemical-vapor deposition 21 the most used ones. In a previous publication, some of the current authors reported the fabrication of Tb doped SiO 2 by means of chemical vapor deposition.…”
Section: Introductionmentioning
confidence: 99%
“…A more plausible explanation is that the REs are subjected to a modified vibrational coupling. REs are located in the aluminum-rich regions because there is a greater quantity of non-bridging Al-O groups with which to coordinate [15]. Al-O-Si bonds vibrate with lower phonon energy than Si-O-Si bonds.…”
Section: Article In Pressmentioning
confidence: 99%