Aluminum in complex luminescence defects in irradiated silicon

Irion, E; Burger, Nicoletta; Thonke, Klaus; Sauer, R.

doi:10.1103/physrevb.38.13079

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…There was early evidence in 1981 that oxygen is not involved in the formation of the T center (as opposed to the I center) [18]. The resemblance of the T center with Al1 [37] and Ga1 [38] defects, with regard to LVM shifts, carbon isotope shift, and alleged symmetry, led to early speculation that boron was involved in the atomic structure of the T center [19,38]-there is however no direct evidence supporting this conjecture. Ab-initio cluster calculations [20,21], drawing upon a detailed analysis of the PL sideband LVM data first presented in Ref.…”

Section: Reviewmentioning

confidence: 99%

Silicon-Integrated Telecommunications Photon-Spin Interface

et al. 2020

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Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface that possesses, simultaneously, long coherence lifetimes and efficient telecommunication-band optical access. In this work we report upon the T center, a silicon defect with long-lived spins and spin-selective bound exciton optical transitions at 1326 nm in the telecommunications O-band. In this first study of T centers in 28 Si, we present the temperature dependence of the zero-phonon line, report ensemble zero-phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magnetophotoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. Here we show that the T center in 28 Si offers electron and nuclear spin lifetimes beyond a millisecond and second, respectively, as well as optical lifetimes of 0.94(1) μs and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between longlived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.

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Section: Reviewmentioning

confidence: 99%

Silicon-Integrated Telecommunications Photon-Spin Interface

et al. 2020

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“…There was early evidence in 1981 that oxygen is not involved in the formation of the T center (as opposed to the I center) [15]. The resemblance of the T center with Al1 [25] and Ga1 [26] defects, with regard to LVM shifts, carbon isotope shift, and alleged symmetry, led to early speculation that boron was involved in the atomic structure of the T center [9,26] there is however no direct evidence supporting this conjecture.…”

Section: Reviewmentioning

confidence: 99%

Characterization of the T center in $^{28}$Si

Bergeron,

Chartrand,

Kurkjian

et al. 2020

Preprint

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Computationally Driven Discovery of T Center-like Quantum Defects in Silicon

Xiong,

Zheng,

McBride

et al. 2024

J. Am. Chem. Soc.

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Quantum technologies would benefit from the development of highperformance quantum defects acting as single-photon emitters or spin-photon interfaces. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there remains a need to search for and develop new high-performance quantum emitters. By searching a high-throughput computational database of more than 22,000 charged complex defects in silicon, we identify a series of defects formed by a group III element combined with carbon ((A−C) Si with A = B, Al, Ga, In, Tl) and substituting on a silicon site. These defects are analogous structurally, electronically, and chemically to the well-known T center in silicon ((C−C−H) Si ), and their optical properties are mainly driven by an unpaired electron on the carbon p orbital. They all emit in the telecom, and some of these color centers show improved properties compared to the T center in terms of computed radiative lifetime, emission efficiency, or smaller optical linewidth. The kinetic barrier computations and previous experimental evidence show that these T center-like defects can be formed through the capture of a diffusing carbon by a substitutional group III atom. We also show that the synthesis of hydrogenated T center-like defects followed by a dehydrogenation annealing step could facilitate the formation of these defects. Our work motivates further studies on the synthesis and control of this new family of quantum defects and demonstrates the use of high-throughput computational screening to discover new color center candidates.

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Aluminum in complex luminescence defects in irradiated silicon

Cited by 4 publications

References 12 publications

Silicon-Integrated Telecommunications Photon-Spin Interface

Silicon-Integrated Telecommunications Photon-Spin Interface

Characterization of the T center in $^{28}$Si

Computationally Driven Discovery of T Center-like Quantum Defects in Silicon

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