Aluminum induced <i>in situ</i> crystallization of amorphous SiC

Wang, Li; Dimitrijev, Sima; Tanner, Philip; Zou, Jin

doi:10.1063/1.3132053

Cited by 12 publications

(10 citation statements)

References 22 publications

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“…Similarly, the advancement in technology for the deposition of silicon carbide on silicon has also been evolving, with the 3C polytype being most commonly investigated because device quality films can be grown between 1000 °C and 1380 °C, below the silicon melt temperature 3 , 4 . This polytype can be deposited on silicon wafers in various forms including epitaxial, polycrystalline, nanocrystalline through to amorphous 5 – 7 . The ability to deposit on large silicon wafers that enables the use of advanced and mature low cost silicon fabrication technologies to fabricate a wide range of devices makes for a compelling argument for this material to be adopted as a new platform technology in a host of applications.…”

Section: Introductionmentioning

confidence: 99%

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Tanner

Iacopi

Phan

et al. 2017

Sci Rep

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This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000 °C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C and while some changes were observed between 1100 °C and 1300 °C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J0 = 1 × 10−11 A/mm2, n = 1.02, and +/−2V rectification ratio of 9 × 106. Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1 mm2) having reduced rectification ratio while smaller areas (0.04 mm2) maintained excellent characteristics of J0 = 2 × 10−10 A/mm2, n = 1.28, and +/−2V ratio of 3 × 106. This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.

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Section: Introductionmentioning

confidence: 99%

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Tanner

Iacopi

Phan

et al. 2017

Sci Rep

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“…The Presence of SiC as indicated in the XRD pattern confirms the feasibility of the in-situ reaction of silicon and carbon. The initiation temperature of this endothermic reaction with conventional micron sized SiC powder is usually carried out at relatively high temperature (500 •C or 600•C) [20,21]. The low temperature of 252.5 •C observed in the present study is attributed to application of hot extrusion.…”

Section: Characteristics Of Aluminum-graphite Composites and The In-smentioning

confidence: 63%

Fabrication and Characterization of Aluminum- Graphite Composites

Selmy¹,

Shehata

Fathy

et al. 2011

ERJ. Engineering Research Journal

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In the present study, a proposed technique called "ex-situ and in-situ powder metallurgy" has been developed to produce aluminum-graphite (Al/Gr) composites. In order to avoid any interfacial reactions between the graphite and the aluminum, an isostatic pressing of material powders followed by hot extrusion techniques was used. Five weight percentages of graphite flakes were mixed with Al powder using a mechanical mixing stirrer. The thermal characteristics and microstructures of the composite were investigated. The effects of graphite content and SiC formation on structure characteristics and properties of composites were investigated. The results showed that some graphite flakes have reacted with silicon present in commercial aluminum powder and formed silicon carbide (SiC) at temperatures above 252 •C. SiC has great effect on composite characteristics. The results also showed refinement and uniform distribution of graphite and SiC particles within the aluminum matrix.

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“…More information on sample label is detailed in Table 1. Microstructure analyses were performed elsewhere by x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM), indicating that the SiC films deposited on Si substrate under these conditions are amorphous [21,22]. The SiC films deposited on oxide covered substrates are also amorphous in microstructure according to XRD and HRTEM analyses (figures not shown here).…”

Section: Introductionmentioning

confidence: 99%

Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

Wang¹

2011

Journal of Non-Crystalline Solids

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Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650°C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600°C to 650°C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600°C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650°C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp 2 and sp 3 C-C/C-H bonds was identified.

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Aluminum induced in situ crystallization of amorphous SiC

Abstract: Articles you may be interested inAluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature Appl.

Cited by 12 publications

References 22 publications

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Fabrication and Characterization of Aluminum- Graphite Composites

Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

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