AlxGa1−xN bulk crystal growth: Crystallographic properties and p–T phase diagram

Belousov, Andrey; Katrych, S.; Hametner, Kathrin; Günther, Dirk; Karpiński, J.; Batlogg, B.

doi:10.1016/j.jcrysgro.2010.04.017

Cited by 11 publications

(6 citation statements)

References 19 publications

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“…The equilibrium nitrogen pressure over nitrides was previously reported for GaN at temperatures up to 1700 1C and AlN up to 3150 1C [3,4]. More recently we presented data for the Al-Ga-N 2 system up to 1800 1C [5].…”

Section: Introductionsupporting

confidence: 71%

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Thermodynamics of the Al–Ga–N2 system

Belousov

Karpiński

Batlogg

2010

Journal of Crystal Growth

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Section: Introductionsupporting

confidence: 71%

“…Based on the experimental data, the p-T-x diagram of the Al-Ga-N 2 system has been determined [5]. However, there is a lack of information about the basic thermodynamic functions such as the standard Gibbs free energy, the enthalpy and entropy of formation.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of the Al–Ga–N2 system

Belousov

Karpiński

Batlogg

2010

Journal of Crystal Growth

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“…Nonetheless, the slightly increased cell parameters for the hexagonal “AlN/AlGaN” phase vs. typical values for AlN made at this temperature, i.e., compare a = 3.14 Å, c = 5.04 Å in this study with a = 3.10 Å, c = 5.01 Å reported for the 800 °C-pyrolyzed pure AlN nanopowders [ 13 ], support some AlGaN presence. This can also be referenced to cell parameters reported for the monocrystalline form of hexagonal AlGaN, i.e., a = 3.1422(4) Å and c = 5.0842(5) Å [ 23 ]. Interestingly, when comparing the pattern with the relevant ones obtained for the similar composites prepared at 800 °C in the binary system made of Al-dimethylamide and Ga-dimethylamide [ 11 ] or Ga-dimethylamide and Ti-dimethylamide [ 14 ], the current pattern is consistent with distinctly worse crystallinity of the mixed nitrides.…”

Section: Resultsmentioning

confidence: 99%

Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)

et al. 2022

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A study is presented on the synthesis of reaction-mixed nitride nanopowders in the reference system of aluminium nitride AlN, gallium nitride GaN, and titanium nitride TiN (Al:Ga:Ti = 1:1:1) followed by their high-pressure and high-temperature sintering towards novel multi-nitride composite nanoceramics. The synthesis starts with a 4 h reflux in hexane of the mixture of the respective metal dimethylamides, which is followed by hexane evacuation, and reactions of the residue in liquid ammonia at −33 °C to afford a mixed metal amide/imide precursor. Plausible equilibration towards a bimetallic Al/Ga-dimethylamide compound upon mixing of the solutions of the individual metal-dimethylamide precursors containing dimeric {Al[N(CH3)2]3}2 and dimeric {Ga[N(CH3)2]3}2 is confirmed by 1H- and 13C{H}-NMR spectroscopy in C6D6 solution. The precursor is pyrolyzed under ammonia at 800 and 950 °C yielding, respectively, two different reaction-mixed composite nitride nanopowders. The latter are subjected to no-additive high-pressure and high-temperature sintering under conditions either conservative for the initial powder nanocrystallinity (650 °C, 7.7 GPa) or promoting crystal growth/recrystallization and, possibly, solid solution formation via reactions of AlN and GaN towards Al0.5Ga0.5N (1000 and 1100 °C, 7.7 GPa). The sintered composite pellets show moderately high mechanical hardness as determined by the Vicker’s method. The starting nanopowders and resulting nanoceramics are characterized by powder XRD, Raman spectroscopy, and SEM/EDX. It is demonstrated that, in addition to the multi-nitride composite nanoceramics of hexagonal AlN/hexagonal GaN/cubic TiN, under specific conditions the novel composite nanoceramics made of hexagonal Al0.5Ga0.5N and cubic TiN can be prepared.

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“…87 In the previous studies, aluminum nitride was doped with different elements, for example, boron and gallium have been investigated theoretically. [88][89][90][91][92][93] In addition, doping with zirconium was investigated experimentally and theoretically. 94,95 The structure of the solid solution doped with Zr was synthesized as a thin film, where depending on the amount of dopant, the structure was exhibiting rock salt and hexagonal AlN structure type.…”

Section: Discussionmentioning

confidence: 99%

Novel boron‐rich aluminum nitride advanced ceramic materials

Zagorac

Fonović

et al. 2022

Int J Applied Ceramic Tech

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Aluminum nitride (AlN) and boron nitride (BN) are well‐known ceramic materials with numerous valuable properties, whereas recently there is a growing field of research on the AlN/BN advanced ceramic materials. Here, we present a study on boron‐rich AlN, structural and electronic properties, and structure–property relationship. Several AlxB1−xN solid solutions (x = 1, .875, .75, and .625) have been investigated, and structure optimization has been performed for four different structure types: h‐BN, wurtzite, sphalerite, and rock salt. First‐principles calculations were performed using hybrid B3LYP functional. New modifications and compounds have been predicted as a function of boron concentration in AlN, and especially, interesting phase transitions were found at extreme pressure conditions. Electronic properties and band structures were computed, and the possibility for bandgap tuning has been discovered. The present study, and especially the structure–property relationship, gives new possibilities for bandgap engineering in boron‐rich AlN electroceramic materials.

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AlxGa1−xN bulk crystal growth: Crystallographic properties and p–T phase diagram

Cited by 11 publications

References 19 publications

Thermodynamics of the Al–Ga–N2 system

Thermodynamics of the Al–Ga–N2 system

Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1)

Novel boron‐rich aluminum nitride advanced ceramic materials

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