2014
DOI: 10.1021/jp507742j
|View full text |Cite
|
Sign up to set email alerts
|

Ambient Air Processing Causes Light Soaking Effects in Inverted Organic Solar Cells Employing Conjugated Polyelectrolyte Electron Transfer Layer

Abstract: Inverted polymer:fullerene bulk heterojunction solar cells employing a conjugated polyelectrolyte electron transfer layer display light soaking effects as the oxygen adsorbed on indium tin oxide (ITO) during an ambient air device processing induces interface charge trap states in the conjugated polyelectrolyte layer and reduces its interface dipole. The light soaking populates the trap states with photoexcited electrons and reinstates the electric dipole, leading to a recovery of efficient charge extraction an… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
16
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 15 publications
(18 citation statements)
references
References 31 publications
2
16
0
Order By: Relevance
“…Figure 3b confirms that the J-V characteristics of AZO-based PSC devices overlap upon forward and reverse biases, reflecting the absence of hysteresis. Figure 3c shows that the J-V characteristics of AZO-based PSC devices remain unchanged with illumination time, indicating that "light-soaking" effects 27 do not affect device operation. Often times, light-soaking effects arise from the presence of residual oxygen introduced in the ETL deposition step (e.g.…”
Section: Fabrication and Characterization Of Polymer Solar Cells (Pscs)mentioning
confidence: 99%
“…Figure 3b confirms that the J-V characteristics of AZO-based PSC devices overlap upon forward and reverse biases, reflecting the absence of hysteresis. Figure 3c shows that the J-V characteristics of AZO-based PSC devices remain unchanged with illumination time, indicating that "light-soaking" effects 27 do not affect device operation. Often times, light-soaking effects arise from the presence of residual oxygen introduced in the ETL deposition step (e.g.…”
Section: Fabrication and Characterization Of Polymer Solar Cells (Pscs)mentioning
confidence: 99%
“…The current generation of inverted OSCs with n-type MO x semiconductors (TiO x , ZnO, and AZO) as an ETL frequently displays so-called light soaking effects, which is best described by the appearance of a S-shaped current−voltage curve near the open circuit point. [ 38,39 ] The origins of light-soaking effects in OSCs are multiply and were correlated to trap fi lling in the metal oxide layer; chemisorbed oxygen on the metal oxide surface that creates carrier depletion; SCLC effects in the metal oxide layer or to an energy barrier at the metal oxide/organic active layer interface. [ 39 ] The light-induced charge generation in the MO x is coming along with a fi lling of the defective trap sites and is enhancing conductivity (photoconductivity) in parallel to reducing injection barriers.…”
Section: Wileyonlinelibrarycommentioning
confidence: 99%
“…[ 38,39 ] The origins of light-soaking effects in OSCs are multiply and were correlated to trap fi lling in the metal oxide layer; chemisorbed oxygen on the metal oxide surface that creates carrier depletion; SCLC effects in the metal oxide layer or to an energy barrier at the metal oxide/organic active layer interface. [ 39 ] The light-induced charge generation in the MO x is coming along with a fi lling of the defective trap sites and is enhancing conductivity (photoconductivity) in parallel to reducing injection barriers. Light soaking therefore requires exposure to light with UV light ( λ ≤ 400 nm) and gradually enhances solar cell effi ciency over illumination time toward the value of maximum performance.…”
Section: Wileyonlinelibrarycommentioning
confidence: 99%
“…The devices were fabricated under ambient conditions; the adsorbed oxygen on the ITO caused the formation of the mid gap charge transfer states in the PFN layer near to the ITO/PFN interface. 31 These states increase the work function of ITO by reducing the electric dipole moment within the PFN layer. Upon continuous light exposure, the photon excited electrons fill the mid trap states and restore the reduced dipole moment of PFN.…”
Section: Resultsmentioning
confidence: 99%