Ambient annealing influence on surface passivation and stoichiometric analysis of molybdenum oxide layer for carrier selective contact solar cells

Stoichiometry and Morphology Analysis of Thermally Deposited V2O5−x Thin Films for Si/V2O5−x Heterojunction Solar Cell Applications

“…They also offer excellent window layer characteristics that can minimize the decrease in PCE resulting from the parasitic absorption by the front layers of solar cells because of their large energy band gap (E g > 3 eV) [ 17 , 18 , 19 ]. In addition, TMOs are promising for reducing the processing cost, as the layers can be formed via low-cost processes such as evaporation (e.g., thermal and electron-beam) or spin coating [ 20 , 21 , 22 ]. Recently, a high PCE of 22.5% was achieved using a Si/TMO HSC in which TMOs (e.g., V 2 O 5 , MoO 3 , and WO 3 ) were employed as the hole-selective contact layer.…”

Sub-stochiometric MoO x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells

“…[10][11][12][13][14] Recently, novel carrier-selective passivating materials have been extensively developed, especially nonstoichiometric transition metal oxides with high work function including WO x (x < 3), [7] V 2 O x (x < 5), [15,16] CrO x (x < 3) [17,18] and MoO x (x < 3). [7,[19][20][21] Among them, MoO x has attracted extensive attention as a hole selective transport layer (HTL) in organic solar cells and undoped asymmetric heterogeneous contact (DASH) silicon solar cells due to its high work function and unique electrical and optical properties. [21][22][23][24][25] The combination of high work function MoO x with lightly doped c-Si(n) substrate will lead to upward band bending at the c-Si interface, and the Fermi level of MoO x close to the valence band of c-Si absorber, forming a favorable level alignment for band to band (B2B) hole transport.…”

“…[7,[19][20][21] Among them, MoO x has attracted extensive attention as a hole selective transport layer (HTL) in organic solar cells and undoped asymmetric heterogeneous contact (DASH) silicon solar cells due to its high work function and unique electrical and optical properties. [21][22][23][24][25] The combination of high work function MoO x with lightly doped c-Si(n) substrate will lead to upward band bending at the c-Si interface, and the Fermi level of MoO x close to the valence band of c-Si absorber, forming a favorable level alignment for band to band (B2B) hole transport. [26][27][28] Various deposition techniques such as thermal evaporation, [29] electron beam evaporation, [30] pulsed laser deposition, [31] and sputtering [32][33][34][35] and sol-gel process [36] were employed for the growth of MoO [37] Bivour et al demonstrated the suitability of sputtered MoO x thin film as a carrier-selective contact for the n-type silicon (n-Si) wafer, and highlighted the importance of higher work function MoO x film to improve the hole-selectivity due to c-Si upward band bending at the n-Si/MoO x interface.…”

Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

“…To boost the cell's efficiency further in order to reach the Si limitation, alternative materials with a higher work function, wide bandgap, and high conductivity instead of a-Si:H(p) layer, so-called transition metal oxide (TMOs) films were introduced. Wide bandgaps with high work function-based materials, such as molybdenum oxide (MoO x ), vanadium oxide (V 2 O x ), tungsten oxide (WO x ), and nickel oxide (NiO x ), have been proposed as hole transport layers (HTLs) for high efficiency SHJ solar cells [20][21][22][23][24][25]. Similarly, to achieve a high performance for SHJ solar cells, wide bandgaps with low work function-based materials, such as lithium fluoride (LiF x ), magnesium fluoride (MgF x ), titanium oxide (TiO x ), and cesium iodide (CsI), have been proposed as electron transport layers (ETLs) [26][27][28][29][30].…”