Ambipolar MoTe<sub>2</sub> Transistors and Their Applications in Logic Circuits

Lin, Yu‐Shan; Xu, Yong; Wang, Sheng Tsung; Li, Song Lin; Yamamoto, Mahito; Aparecido-Ferreira, Alex; Li, Wenwu; Sun, Huabin; Nakaharai, Shu; Jian, Wen‐Bin; Ueno, Keiji; Tsukagoshi, Kazuhito

doi:10.1002/adma.201305845

Cited by 421 publications

(389 citation statements)

References 38 publications

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“…When a negative V bias is applied to the WSe 2 amplifier (Fig. 5c), in the positive phase of V ac , I ds increases/ decreases as V GS decreases/increases, so the voltage drop across the off-chip resistor will increase/decrease, respectively 46,47 . As a consequence, the corresponding V out will decrease/increase, which exhibits the same phase as the input signal.…”

Section: Resultsmentioning

confidence: 99%

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

et al. 2018

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Tungsten diselenide (WSe 2 ) has many excellent properties and provides superb potential in applications of valleybased electronics, spin-electronics, and optoelectronics. To facilitate the digital and analog application of WSe 2 in CMOS, it is essential to understand the underlying ambipolar hole and electron transport behavior. Herein, the electric field screening of WSe 2 with a thickness range of 1-40 layers is systemically studied by electrostatic force microscopy in combination with non-linear Thomas-Fermi theory to interpret the experimental results. The ambipolar transport behavior of 1-40 layers of WSe 2 transistors is systematically investigated with varied temperature from 300 to 5 K. The thickness-dependent transport properties (carrier mobility and Schottky barrier) are discussed. Furthermore, the surface potential of WSe 2 as a function of gate voltage is performed under Kelvin probe force microscopy to directly investigate its ambipolar behavior. The results show that the Fermi level will upshift by 100 meV when WSe 2 transmits from an insulator to an n-type semiconductor and downshift by 340 meV when WSe 2 transmits from an insulator to a p-type semiconductor. Finally, the ambipolar WSe 2 transistor-based analog circuit exhibits phase-control by gate voltage in an analog inverter, which demonstrates practical application in 2D communication electronics.

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Section: Resultsmentioning

confidence: 99%

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

et al. 2018

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“…1b, the measured height of the MoTe 2 flake was 4 nm, corresponding to six layers. 28,29 Figure 1d depicts the Raman spectra of the MoTe 2 flake, which shows the characteristic in plane E . [24][25][26][27][28][29] The Raman spectra for MoS 2 flake is shown in Fig.…”

Section: Experimental Results Without Lightmentioning

confidence: 99%

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

et al. 2017

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Fabrication of the out-of-plane atomically sharp p-n junction by stacking two dissimilar two-dimensional materials could lead to new and exciting physical phenomena. The control and tunability of the interlayer carrier transport in these p-n junctions have a potential to exhibit new kind of electronic and optoelectronic devices. In this article, we present the fabrication, electrical, and optoelectrical characterization of vertically stacked few-layers MoTe 2 (p)-single-layer MoS 2 (n) heterojunction. Over and above the antiambipolar transfer characteristics observed similar to other hetero p-n junction, our experiments reveal a unique feature as a dip in transconductance near the maximum. We further observe that the modulation of the dip in the transconductance depends on the doping concentration of the two-dimensional flakes and also on the power density of the incident light. We also demonstrate high photo-responsivity of~10 5 A/W at room temperature for a forward bias of 1.5 V. We explain these new findings based on interlayer recombination rate-dependent semi-classical transport model. We further develop first principles-based atomistic model to explore the charge carrier transport through MoTe 2 -MoS 2 heterojunction. The similar dip is also observed in the transmission spectrum when calculated using density functional theory-non-equilibrium Green's function formalism. Our findings may pave the way for better understanding of atomically thin interface physics and device applications.

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“…Most MTe 2 ‐based FETs have been reported to possess a carrier mobility of 1–68 cm 2 V −1 s −1 and large on/off ratios of 10 4 –10 6 16, 22, 75, 98, 166, 167, 168. Pradhan et al reported hole‐doped MoTe 2 field‐effect transistors ( Figure 6 a) with a saturated carrier mobility of up to 20 cm 2 V −1 s −1 under a suitable bias at room temperature.…”

Section: Applications For 2d Optoelectronic and Electronic Devicesmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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Ambipolar MoTe₂ Transistors and Their Applications in Logic Circuits

Cited by 421 publications

References 38 publications

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

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Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Cited by 421 publications

References 38 publications

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

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Ambipolar MoTe₂ Transistors and Their Applications in Logic Circuits