Ambipolar Oxide Thin‐Film Transistor

Abstract

The first ambipolar oxide‐based thin‐film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary‐like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p‐channel and n‐channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary‐like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.

Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering

“…In this case, the saturation field effect mobility was 0.81 cm 2 /Vs for the p-channel TFT and 5 × 10 −4 cm 2 /Vs for n-channel TFT. 26 Nayak et al has reported the p-channel and n-channel TFT in single step channel layer deposition. Either p-type SnO or n-type SnO 2 channel TFTs were formed depending on the method by which the gate insulator was deposited.…”

“…22,26,27 An important aspect of tin oxide material is that we can easily achieve ptype (SnO phase) and n-type (SnO 2 phase) conduction in this material. In this paper, we report the fabrication of both p-channel and nchannel TFTs starting from same source material.…”

Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

“…To realize complementary inverters, one can either combine an n-type TFT and a p-type TFT or use two ambipolar TFTs. A rail-to-rail output voltage behavior can be easily achieved in the former but hard to achieve in latter case because neither of the two ambipolar TFTs can be fully switched off [8,9,10,11]. The static current will also result in a static power consumption, which may be an issue in the case of large scale integration.…”

P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer

“…[1][2][3][4][5] Both n-and p-type oxide semiconductors with excellent performance are necessary to develop oxide TFT-based circuits. However, most oxide semiconducting materials including zinc oxide (ZnO), indium gallium zinc oxide (IGZO), and indium zinc tin oxide (IZTO) show n-type properties.…”